Enhancing photovoltaic performance of Bi-doped perovskite solar cells with novel double electron transport layer: achieving high open-circuit voltage and efficiency
摘要
This study aims to fabricate undoped and 6% Bi-doped MAPbI2Br perovskite layers using the spin coating method and study their structural, morphological, and photovoltaic properties. The cubic structure of MAPbI2Br was verified by X-ray diffraction, with relatively large grains being observed in SEM micrographs. Compared to its pristine counterpart, the 6% Bi-doped MAPbI2Br layer shows an improved refractive index and a smaller bandgap, according to UV-visible spectroscopy. This work presents a dual-layer electron transport layer (ETL) design made of TiO2 and Al-SnO2 that is especially suited for PSCs containing MAPbI2Br as the hole transport layer (HTL). This arrangement marks a major milestone for perovskite solar cells (PSCs) with Bi-MAPbI2Br as absorber and an inorganic ETL, achieving an open-circuit voltage of 1.07 V and a power conversion efficiency of 10.39%. The conduction band alignment of MAPbI2Br and Al-SnO2 promotes effective electron transport, which leads to a reduction of recombination losses and thus enhances the power conversion efficiency of the solar cell.
Graphical Abstract