<p>Quaternary metal oxynitrides obtained by substituting oxygen anions (O<sup>2–</sup>) in a parent oxide by nitrogen (N<sup>3–</sup>) are encouraging candidates for photoelectrochemical (PEC) water splitting as photoanodes. A high light transmittance of photoanode thin film is promising for building bias-free tandem cells with high solar-to-hydrogen (STH) conversion efficiency. To synthetize Ta-based quaternary metal oxynitrides, metal alkoxides or metal halides with inherent moisture sensitivity and high-cost natures are most frequently used as starting sources. This work reports a general strategy to prepare semi-transparent quaternary Ta-based oxynitride thin film photoanodes based on the example of SrTaO<sub>2</sub>N by using moisture-insensitive Ta<sub>2</sub>O<sub>5</sub> as a starting material. The strategy can be adopted as a universal process for the fabrication of semi-transparent quaternary Ta-based oxynitride thin films, such as BaTaO<sub>2</sub>N, on a large scale by using cheap chemicals.</p> Graphical Abstract <p></p>

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Fabrication of semi-transparent SrTaO2N photoanodes by a wet-chemical method using water-soluble tantalum precursor

  • Zili Ma,
  • Yanjun Yin

摘要

Quaternary metal oxynitrides obtained by substituting oxygen anions (O2–) in a parent oxide by nitrogen (N3–) are encouraging candidates for photoelectrochemical (PEC) water splitting as photoanodes. A high light transmittance of photoanode thin film is promising for building bias-free tandem cells with high solar-to-hydrogen (STH) conversion efficiency. To synthetize Ta-based quaternary metal oxynitrides, metal alkoxides or metal halides with inherent moisture sensitivity and high-cost natures are most frequently used as starting sources. This work reports a general strategy to prepare semi-transparent quaternary Ta-based oxynitride thin film photoanodes based on the example of SrTaO2N by using moisture-insensitive Ta2O5 as a starting material. The strategy can be adopted as a universal process for the fabrication of semi-transparent quaternary Ta-based oxynitride thin films, such as BaTaO2N, on a large scale by using cheap chemicals.

Graphical Abstract