<p>Taking both advantages of Mn or La doped 0.7BiFeO₃-0.3PbTiO₃ (BF-PT) thin films, a periodic structured 0.7(Bi_0.95La_0.05)FeO₃-0.3PbTiO₃/0.7Bi(Fe_0.95Mn_0.05)O₃-0.3PbTiO₃ (BLF-PT/BFM-PT) thin films were deposited on Hastelloy substrates alternatively to achieve excellent dielectric and ferroelectric properties with low leakage current density. La³⁺or Mn²⁺ doped BF-PT thin films were deposited on the PbTiO₃ (PT) buffered Hastelloy substrates by using the sol-gel method. The comparisons were conducted among undoped BF-PT, BFM-PT, BLF-PT and periodic BLF-PT/BFM-PT thin films in view of the dielectric, ferroelectric and conduction properties. It has been found that La³⁺or Mn²⁺ doped BF-PT thin films on Hastelloy maintain good dielectric, ferroelectric and leakage current properties. Particularly, periodic BLF-PT/BFM-PT thin films exhibit the higher dielectric constant (ε_r) and lower dielectric loss (tanδ) of 266 and 0.058 respectively at frequency of 10³Hz, and the lower leakage current density of 8.66 × 10⁻⁸A/cm². The conduction mechanism of BFM-PT and periodic BLF-PT/BFM-PT thin films was of ohmic conduction under fields of below 300 kV/cm, while it was of FN tunneling (Fowler Nordheim tunneling) conduction above 62 kV/cm for undoped BF-PT thin films. Moreover, the interfaces of periodic thin films further prevent the transport of carriers, revealing the bulk limitation conduction mechanism under higher electric fields.</p> Graphical Abstract <p></p>