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<p>This study presents the development and performance evaluation of a neutron depth profiling (NDP) system utilizing cold neutrons at the Korea Atomic Energy Research Institute (KAERI), specifically designed for the analysis of ion-implanted <sup>10</sup>B in silicon carbide (SiC). The system’s reliability and operational stability were verified using specialized SiC-based reference materials. The system incorporates real-time neutron flux monitoring for correction purposes, thereby improving measurement accuracy and consistency. The quantified dose values demonstrated a combined standard uncertainty of 1.84%, reflecting the system’s precision and traceability. Furthermore, the doses measured by the KAERI-NDP system closely matched the implanted reference values within the evaluated uncertainty, confirming the system’s measurement accuracy. The depth profiles obtained from the KAERI-NDP system were also compared with results from secondary ion mass spectrometry (SIMS), revealing a high degree of correlation, which substantiates the reliability of the NDP technique for accurate near-surface quantitative analysis. Consequently, this validated NDP system provides a dependable analytical tool for applications ranging from semiconductor dopant profiling to Li-ion battery research.</p>

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Development and performance evaluation of neutron depth profiling for 10B ion implantation in SiC at KAERI

  • 期刊论文

  • 发表日期：

    2025年9月25日

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  • Jinhwan Kim,
  • Byung-Gun Park,
  • Hwijoon Jeong,
  • Gwang-Min Sun,
  • Kyung-Min Kim

摘要

This study presents the development and performance evaluation of a neutron depth profiling (NDP) system utilizing cold neutrons at the Korea Atomic Energy Research Institute (KAERI), specifically designed for the analysis of ion-implanted 10B in silicon carbide (SiC). The system’s reliability and operational stability were verified using specialized SiC-based reference materials. The system incorporates real-time neutron flux monitoring for correction purposes, thereby improving measurement accuracy and consistency. The quantified dose values demonstrated a combined standard uncertainty of 1.84%, reflecting the system’s precision and traceability. Furthermore, the doses measured by the KAERI-NDP system closely matched the implanted reference values within the evaluated uncertainty, confirming the system’s measurement accuracy. The depth profiles obtained from the KAERI-NDP system were also compared with results from secondary ion mass spectrometry (SIMS), revealing a high degree of correlation, which substantiates the reliability of the NDP technique for accurate near-surface quantitative analysis. Consequently, this validated NDP system provides a dependable analytical tool for applications ranging from semiconductor dopant profiling to Li-ion battery research.