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<p>The effects of average densities of hollow silicas microspheres (HSM) or solid silica microspheres (SSM)) on dielectric and/or thermal-resistant characteristics of poly(ether ketone ketone) (PEKK)/HSM and PEKK/SSM films were methodically investigated. Dielectric constant (ε<sub>r</sub>) and loss (tan δ) values of PEKK/HSM or PEKK/SSM films are minimized, as their HSM or SSM loadings approach a corrreesponding optimum value, and the minimized dielectric characteristic values of PEKK/HSM or PEKK/SSM films diminish notably with decreasing HSM (or SSM) average densities. The values of linear thermal expansion coefficient (LTEC) attained for PEKK/HSM or PEKK/SSM films diminish, however, their thermal degradation temperatures enlarge appreciably with increasing HSM or SSM loadings. Inspiringly small ε<sub>r</sub>/tan δ and excellent thermal stability is attained for suitably made PEKK/HSM substrate films, that may meet the requirements for 6G communication system in the future. The free volume characteristic values attained for PEKK/HSM or PEKK/SSM films are maximized, as HSM or SSM loadings reach a corresponding optimum value. The approving effect of HSM or SSM on reducing ε<sub>r</sub> or tan δ of PEKK/HSM and PEKK/SSM films are mostly attributed to the inherently small ε<sub>r</sub> or tan δ of hollow silicas microspheres fillers, or air contained in tiny free volume holes of PEKK matrices or interfaces of PEKK/HSM or PEKK/SSM, that is predicted to diminish the values of dielectric characteristics.</p>

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Poly(ether ketone ketone)/hollow silicon dioxide microspheres substrate films and/or the application for wireless sixth generation communication

  • 期刊论文

  • 发表日期：

    2025年10月30日

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  • Wei-qing Song,
  • Xing-yu Wei,
  • Ning Ma,
  • Chin-Lai Chen,
  • Tim Hsu,
  • Jen-taut Yeh

摘要

The effects of average densities of hollow silicas microspheres (HSM) or solid silica microspheres (SSM)) on dielectric and/or thermal-resistant characteristics of poly(ether ketone ketone) (PEKK)/HSM and PEKK/SSM films were methodically investigated. Dielectric constant (εr) and loss (tan δ) values of PEKK/HSM or PEKK/SSM films are minimized, as their HSM or SSM loadings approach a corrreesponding optimum value, and the minimized dielectric characteristic values of PEKK/HSM or PEKK/SSM films diminish notably with decreasing HSM (or SSM) average densities. The values of linear thermal expansion coefficient (LTEC) attained for PEKK/HSM or PEKK/SSM films diminish, however, their thermal degradation temperatures enlarge appreciably with increasing HSM or SSM loadings. Inspiringly small εr/tan δ and excellent thermal stability is attained for suitably made PEKK/HSM substrate films, that may meet the requirements for 6G communication system in the future. The free volume characteristic values attained for PEKK/HSM or PEKK/SSM films are maximized, as HSM or SSM loadings reach a corresponding optimum value. The approving effect of HSM or SSM on reducing εr or tan δ of PEKK/HSM and PEKK/SSM films are mostly attributed to the inherently small εr or tan δ of hollow silicas microspheres fillers, or air contained in tiny free volume holes of PEKK matrices or interfaces of PEKK/HSM or PEKK/SSM, that is predicted to diminish the values of dielectric characteristics.