Poly(ether ketone ketone)/Silica nanotubes substrate films and their Sixth Generation Communciation performance

Silica hollow tube (SHT) nanofillers were fine distributed in poly(ether ketone ketone) (PEKK) to serve decently as sixth generation (6G) substrate films. Distinctly lower dielectric and thermal expansion characteristics were detected for all PEKK^a_xSHT_y film sequence filled with proper amounts of SHT nanofillers. The dielectric characteristics detected for all PEKK^a_xSHT_y film sequence diminished to a minimum, as SHT loads came near an optimal value of 8wt%. The LCTE evaluated for each PEKK^a_xSHT_y film sequence reduced distinctly with increasing SHT loads. Suitable dielectric constant (ε_r) (2.26 at 1 MHz), and/or dielectric loss (tan δ) (0.0027 at 1 MHz) and/or Linear coefficient of thermal expansion (LCTE) (30.5 × 10⁻⁶/ °C) for 6G rapid-speed communication were detected for PEKK^P7000₉₂SHT₈ substrate film having 8wt% load of SHT nanofillers. Meanwhile, the beginning degradation temperatures estimated for all PEKK^a_xSHT_y film sequence increased distinctly with increasing SHT loads. All free-volume-cavity characteristics estimated for all PEKK^a_xSHT_y film sequence approached a highest value, as SHT loads came near an optimal value of 8wt%. Distinctly lower ε_r and tan δ were detected for PEKK^a and PEKK^a_xSHT_y having higher free-volume-cavity characteristics. Possible interpretations for the distinctly diminished dielectric and/or heat-resistant characteristics acquired for PEKK^a_xSHT_y films are presented.