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<p>We systematically investigated the magnetic properties of TbFeCo thin films as a function of thickness between 17 and 34&#xa0;nm, with and without a Ta buffer layer, focusing on anisotropy behavior and magnetic compensation effects. Films grown on thermally oxidized SiO<sub>2</sub>/Si substrates without Ta buffer layer exhibit pronounced perpendicular magnetic anisotropy (PMA), which is attributed to strain-induced effects associated with surface roughness induced by the substrate. Across both series, the out-of-plane magnetization remains higher than the in-plane response, and the minimum saturation magnetization occurs at intermediate thicknesses, suggesting proximity to a thickness-driven magnetic compensation regime. Notably, the compensation-like minimum appears at significantly greater thicknesses than values reported for films grown on other substrates, indicating that thermally oxidized Si shifts the effective compensation thickness beyond 24&#xa0;nm. These findings highlight the crucial role of substrate interface and structural morphology in tailoring the magnetic anisotropy and compensation behavior of TbFeCo thin films for spintronic applications.</p>

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Influence of Thickness and Ta Buffer Layer on the Magnetic Properties of TbFeCo Thin Films

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • Fatime Gulsah Akca,
  • Osman Karlioglu,
  • Eyup Duman,
  • Halime Gul Yaglioglu

摘要

We systematically investigated the magnetic properties of TbFeCo thin films as a function of thickness between 17 and 34 nm, with and without a Ta buffer layer, focusing on anisotropy behavior and magnetic compensation effects. Films grown on thermally oxidized SiO2/Si substrates without Ta buffer layer exhibit pronounced perpendicular magnetic anisotropy (PMA), which is attributed to strain-induced effects associated with surface roughness induced by the substrate. Across both series, the out-of-plane magnetization remains higher than the in-plane response, and the minimum saturation magnetization occurs at intermediate thicknesses, suggesting proximity to a thickness-driven magnetic compensation regime. Notably, the compensation-like minimum appears at significantly greater thicknesses than values reported for films grown on other substrates, indicating that thermally oxidized Si shifts the effective compensation thickness beyond 24 nm. These findings highlight the crucial role of substrate interface and structural morphology in tailoring the magnetic anisotropy and compensation behavior of TbFeCo thin films for spintronic applications.