<p>Fe(Se, Te) film is a key material for developing next-generation high-field magnets, thanks to its extremely high upper critical field, which gains significant research attention. The performance of Fe(Se, Te) films still requires improvement, and it is necessary to further enhance the critical current density of the films by optimizing the fabrication process. This work reports the effects of argon background pressure and deposition parameters on the properties of epitaxial Fe(Se, Te) films fabricated by pulsed laser deposition on flexible metal tapes. X-ray diffraction analysis confirms phase purity and exclusive <i>c</i>-axis orientation in all films. Compared to the film deposited at an argon pressure of 5 mTorr and an identical substrate temperature, films grown at 10 mTorr exhibited a significantly greater thickness. This suggests that a higher background pressure can enhance deposition efficiency. The increased deposition pressure also raised the concentrations of both Te and interstitial Fe in the films. The excess interstitial Fe ultimately led to a reduction in the critical current density. Subsequent TEM imaging showed the higher background pressure introduced additional defects into the matrix, which in turn led to a slower critical current density decay in magnetic fields. In contrast, the thinner film with lower Fe content deposited at 5 mTorr demonstrated a higher self-field critical current density value of 4.6 MA/cm². Nevertheless, excessive film thickness was found to promote iron deficiency and the formation of surface droplets. These results highlight the crucial role of background gas pressure in tuning the stoichiometry and critical current density of Fe(Se, Te) films.</p>