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<p>This study investigates the superconducting properties of MoRe films deposited by DC magnetron sputtering with a composite target consisting of 56 at.% Mo and 44 at.% Re on sapphire substrates at room temperature. All films are passivated with a silicon capping layer. The focus of this study is on the thickness dependence of the critical temperature <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(T_\textrm{c}(d)\)</EquationSource> </InlineEquation>. The electrical transport measurements show a direct correlation between <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(T_\textrm{c}\)</EquationSource> </InlineEquation> and disorder, quantified by the Ioffe-Regel parameter, <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(k_Fl\)</EquationSource> </InlineEquation>. The parameter ranges from 6 for 3&#xa0;nm films to 20 for 100&#xa0;nm, while <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(T_\textrm{c}\)</EquationSource> </InlineEquation> varies from 6&#xa0;K to 8.4&#xa0;K, respectively. The analysis suggests that the films exhibit a moderate level of disorder, and the <InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(T_\textrm{c}(d)\)</EquationSource> </InlineEquation> dependence can be explained by a fermionic mechanism related to <InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(k_Fl\)</EquationSource> </InlineEquation> rather than the sheet resistance of the film, <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(R_s\)</EquationSource> </InlineEquation>.</p>

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Disorder-controlled Superconducting Properties in thin Molybdenum-Rhenium Films

  • 期刊论文

  • 发表日期：

    2025年12月26日

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  • I. N. Pavlov,
  • A. I. Lomakin,
  • S. S. Svyatodukh,
  • N. A. Titova,
  • K. I. Khilay,
  • E. M. Baeva,
  • A. I. Kolbatova,
  • G. N. Goltsman

摘要

This study investigates the superconducting properties of MoRe films deposited by DC magnetron sputtering with a composite target consisting of 56 at.% Mo and 44 at.% Re on sapphire substrates at room temperature. All films are passivated with a silicon capping layer. The focus of this study is on the thickness dependence of the critical temperature \(T_\textrm{c}(d)\) . The electrical transport measurements show a direct correlation between \(T_\textrm{c}\) and disorder, quantified by the Ioffe-Regel parameter, \(k_Fl\) . The parameter ranges from 6 for 3 nm films to 20 for 100 nm, while \(T_\textrm{c}\) varies from 6 K to 8.4 K, respectively. The analysis suggests that the films exhibit a moderate level of disorder, and the \(T_\textrm{c}(d)\) dependence can be explained by a fermionic mechanism related to \(k_Fl\) rather than the sheet resistance of the film, \(R_s\) .