Characterization and Performance Analysis of CeO₂ buffer Layer for YBCO Coated Conductors
摘要
This study systematically optimizes the epitaxial growth of CeO2 buffer layers on IBAD-MgO substrates via multi-channel multi-beam pulsed laser deposition (MC-MB-PLD) to enhance the performance of YBa2Cu3O7-δ (YBCO) coated conductors. Through parametric control of oxygen pressure (1–15 mTorr), target-substrate distance (30–60 mm), laser energy density (0.54–3.02 J/cm2), laser energy (250–325 mJ), and substrate temperature (750–900 °C), we determined that: A target-substrate distance of 45 mm (within the stable plasma zone) results in atomically smooth CeO₂ films with (002) orientation (RMS roughness: 0.8 nm). An optimal oxygen pressure of 10 mTorr combined with a laser energy of 300 mJ effectively eliminates a-axis grains and suppresses particulate defects. Substrate temperatures ≥ 850 °C achieve pure (002) orientation with in-plane and out-of-plane textures of 4.3° and 2.1°, respectively. YBCO films deposited on optimized CeO₂ buffers exhibit critical currents up to 91 A (Jc = 4.0 MA/cm2 at 77 K, 0 T). Also, this paper prepared an 830-m long Y1-xGdxBa2Cu3O7-δ (YGBCO) tape achieves uniform critical currents of 500 A (Jc = 3.85 MA/cm2) with ΔIc < 5%, demonstrating the feasibility of MC-MB-PLD for industrial-scale 2G-HTS production.