The Impurity States in Different Shaped In_xGa_1-xAs/GaAs Quantum Wells under the Influence of Temperature and Hydrostatic Pressure

In this study, the influence of temperature and hydrostatic pressure on impurity states in In_xGa_1-xAs/GaAs quantum wells (QWs) with different shapes, including square, parabolic, and V-shaped, was investigated using the effective mass envelope function approximation and the plane wave expansion method. The results demonstrate that an increase in temperature leads to a decrease in the energy of the impurity states, while an increase in hydrostatic pressure causes the impurity state energy to rise. It was observed that the effect of hydrostatic pressure on the impurity states is more significant than that of temperature. Furthermore, the impact of temperature and hydrostatic pressure varies depending on the shape of the QWs. Additionally, as the In composition increases, the impurity states exhibit a gradual increasing trend.