Anisotropic Inverse Spin Hall Effect Observed in Sputtering Grown Topological Antiferromagnet Mn₃Sn Films

Recent theoretically predicted strong anisotropic spin Hall effect (SHE) or inverse SHE (ISHE) in chiral antiferromagnetic compounds Mn₃X (X = Ge, Sn, Ga, Ir, Rh, and Pt) could potentially expand the horizons of the antiferromagnet spintronics; however, it has not been experimentally observed yet. For achieving this goal, we have first successfully fabricated high-quality Kagome phase Mn₃Sn films with smooth surface by a combination of room-temperature magnetron sputtering and high-temperate annealing. These Mn₃Sn films were proved to be epitaxially grown on MgO (110) single crystal substrate with a seldom reported ( \({1}{\text{0}}\stackrel{\text{-}}{1}{\text{0}}\) $1\text{0}\stackrel{\text{-}}{1}\text{0}$ ) orientation that could serve as a good platform for the studies of the crystalline orientation-related anisotropic phenomenon. Then, by employing spin pumping-induced inverse spin Hall effect (SP-ISHE) voltage measurements, we have experimentally proved the existence of crystalline orientation-related anisotropic ISHE with an amplitude of more than 35% in our Mn₃Sn films.