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<p>We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10909_2024_3256_Article_IEq1.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\thicksim\)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation> 2<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10909_2024_3256_Article_IEq2.gif" Format="GIF" Height="23" Rendition="HTML" Resolution="72" Type="Linedraw" Width="32" /> </InlineMediaObject> <EquationSource Format="TEX">\(\frac{e}{\sqrt{Hz}}\)</EquationSource> <EquationSource Format="MATHML"><math> <mfrac> <mi>e</mi> <msqrt> <mrow> <mi mathvariant="italic">Hz</mi> </mrow> </msqrt> </mfrac> </math></EquationSource> </InlineEquation> at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.</p>

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Sensing Few Electrons Floating on Helium with High-Electron-Mobility Transistors

  • 期刊论文

  • 发表日期：

    2025年1月22日

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  • M. M. Feldman,
  • G. Fuchs,
  • T. Liu,
  • L. A. D’Imperio,
  • M. D. Henry,
  • E. A. Shaner,
  • S. A. Lyon

摘要

We report on low-frequency measurements of few electrons floating on superfluid helium using a bespoke cryogenic cascode amplifier circuit built with off-the-shelf GaAs high-electron-mobility transistors (HEMTs). We integrate this circuit with a charge-coupled device (CCD) to transport the electrons on helium and characterize its performance. We show that this circuit has a signal-to-noise ratio (SNR) of \(\thicksim\) ∼ 2 \(\frac{e}{\sqrt{Hz}}\) e Hz at 102 kHz, an order of magnitude improvement from previous implementations, and provides a compelling alternative to few electron sensing with high-frequency resonators.