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<p>The annealing effect on the structural, surface topology, optical and electrical possessions of the Au/ZnPc/un-InP metal/polymer/semiconductor (MPS) diodes was investigated before and after annealing at 100 ℃, 200 ℃, 300 ℃ and 400 ℃. The structural behaviour of ZnPc films was examined by X-ray diffraction (XRD), which indicated that a phase transition occurred after annealing at 300 ℃. Furthermore, the surface topology of ZnPc films was analyzed using atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) with energy dispersive X-ray spectroscopy (EDAX) approaches before and after annealing. AFM analysis revealed that the surface roughness (root-mean-square value) increased with annealing up to 200 ℃ (6.76&#xa0;nm), slightly decreased at 300 ℃ (6.70&#xa0;nm), and increased again at 400 ℃ (7.60&#xa0;nm). Optical studies revealed temperature-dependent shifts in Q-band absorption and enhanced Davydov splitting, while the optical band gap remained nearly unchanged. The electronic parameters of the MPS diode were evaluated before and after annealing through the current-voltage (I–V) process. The results demonstrated that the MPS diode exhibited a rectifying behavior regardless of the annealing temperature. A statistical distribution study was employed to determine the mean Φ<sub>b</sub> and ‘n’ for the 20 MPS diodes before and after annealing. These outcomes point out that the Φ<sub>b</sub> rises for the diode annealed at 300 ℃ (0.87&#xa0;eV) and subsequently drops for annealing temperatures of 400 ℃ (0.79&#xa0;eV). Further, homogeneous Φ<sub>b</sub> was estimated from the relationship between experimental Φ<sub>b</sub> and n for the MPS diodes before and after annealing. The interface state density (N<sub>SS</sub>) of the MPS diodes, estimated from the I-V, exhibited a decreasing trend with increasing annealing temperature up to 300 ℃ (4.59 × 10<sup>9</sup> eV<sup>−1</sup> cm<sup>−2</sup>), followed by an increase for the diode annealed at 400 ℃ (3.50 × 10<sup>11</sup> eV<sup>−1</sup> cm<sup>−2</sup>). Under forward-bias conditions, ohmic conduction dominated at lower-bias regions, while space charge limited current (SCLC) predominated at higher-bias regions for the as-deposited and annealed MPS diodes at various temperatures. These findings emphasized the potential of MPS diodes to enhance the performance and reliability of organic–inorganic hybrid semiconductor devices utilized for electronic and optoelectronic applications.</p>

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Effect of Annealing Temperature on Structural, Electrical and Current Conduction Mechanisms of Au/ZnPc/un-InP MPS-Type Schottky Diode

  • 期刊论文

  • 发表日期：

    2026年5月9日

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  • V. Rajagopal Reddy,
  • D. Surya Reddy,
  • S. Sai Krupa,
  • S. Ashajyothi,
  • A. Ashok Kumar,
  • Chel-Jong Choi

摘要

The annealing effect on the structural, surface topology, optical and electrical possessions of the Au/ZnPc/un-InP metal/polymer/semiconductor (MPS) diodes was investigated before and after annealing at 100 ℃, 200 ℃, 300 ℃ and 400 ℃. The structural behaviour of ZnPc films was examined by X-ray diffraction (XRD), which indicated that a phase transition occurred after annealing at 300 ℃. Furthermore, the surface topology of ZnPc films was analyzed using atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) with energy dispersive X-ray spectroscopy (EDAX) approaches before and after annealing. AFM analysis revealed that the surface roughness (root-mean-square value) increased with annealing up to 200 ℃ (6.76 nm), slightly decreased at 300 ℃ (6.70 nm), and increased again at 400 ℃ (7.60 nm). Optical studies revealed temperature-dependent shifts in Q-band absorption and enhanced Davydov splitting, while the optical band gap remained nearly unchanged. The electronic parameters of the MPS diode were evaluated before and after annealing through the current-voltage (I–V) process. The results demonstrated that the MPS diode exhibited a rectifying behavior regardless of the annealing temperature. A statistical distribution study was employed to determine the mean Φb and ‘n’ for the 20 MPS diodes before and after annealing. These outcomes point out that the Φb rises for the diode annealed at 300 ℃ (0.87 eV) and subsequently drops for annealing temperatures of 400 ℃ (0.79 eV). Further, homogeneous Φb was estimated from the relationship between experimental Φb and n for the MPS diodes before and after annealing. The interface state density (NSS) of the MPS diodes, estimated from the I-V, exhibited a decreasing trend with increasing annealing temperature up to 300 ℃ (4.59 × 109 eV−1 cm−2), followed by an increase for the diode annealed at 400 ℃ (3.50 × 1011 eV−1 cm−2). Under forward-bias conditions, ohmic conduction dominated at lower-bias regions, while space charge limited current (SCLC) predominated at higher-bias regions for the as-deposited and annealed MPS diodes at various temperatures. These findings emphasized the potential of MPS diodes to enhance the performance and reliability of organic–inorganic hybrid semiconductor devices utilized for electronic and optoelectronic applications.