Four-Layer Bismuth Layer Structure Ferroelectric Material BaBi4Ti4O15 Incorporating into PVDF Blend Composites for Dielectric Capacitor Application
摘要
This work investigates the fabrication of barium bismuth titanate (BaBi4Ti4O15) ceramic and its incorporation into polyvinylidene fluoride (PVDF) to produce composite films via solution casting. Scanning electron microscope images reveal a distinct microstructure, with grains uniformly dispersed and grain boundaries clearly visible, suggesting that BBTO ceramic particles are evenly incorporated into the PVDF polymer matrix. At lower frequencies, the nearly 50-fold increase in dielectric constant with temperature is attributed to the growing influence of interfacial polarisation. When BaBi4Ti4O15 (BBTO) is added to the PVDF matrix, the AC conductivity decreases dramatically, providing evidence for a prospective energy storage opportunity. Moreover, the work established the stability and compatibility of the composite by confirming that BBTO does not impact the β phase of PVDF. An impedance spectroscopic study revealed that upon dilution, both BBTO and PVDF samples exhibited a single partially formed semicircle, suggesting a combination of the electrode effect on conduction and grain boundary resistance. Therefore, the dielectric response, AC conductivity, and impedance behaviour of the PVDF-BBTO composites are mainly determined by interfacial polarisation in the double layer and by the thermally activated motion of the PVDF polymer chains. This work initiated a deeper understanding of the ceramic PVDF structure and its potential as a dielectric capacitor.