<p>The Nd<sub>0.6</sub>Sr<sub>0.3</sub>Ba<sub>0.1</sub>MnO<sub>3</sub> compound was successfully synthesized using the self-combustion method and extensively characterized through structural, morphological, and electrical analyses. This study combines structural, morphological, Direct Courant/Alternative Courant conductivity, and impedance spectroscopy to systematically correlate structural modifications with electronic and dielectric properties, providing a deeper understanding of conduction and polarization mechanisms in doped perovskite manganites. X-ray diffraction refinement confirmed that the material crystallizes in an orthorhombic phase (Pnma space group), with noticeable lattice expansion due to the partial substitution of Sr²⁺ by Ba²⁺. The increase in Mn-O bond length and the modification of the Mn-O-Mn bond angle significantly influence the electronic bandwidth (<i>W/W</i><sub><i>0</i></sub> <i>= 0.1381</i>), impacting charge transport and electronic properties. Scanning electron microscopy revealed a uniform grain distribution, with an average grain size of 49&#xa0;nm. The study of direct current and alternating current conductivity demonstrated a strong temperature dependence, where charge transport transitions from an Overlapping Large Polaron Tunneling mechanism at low temperatures (300–500&#xa0;K) to a Correlated Barrier Hopping model beyond 500&#xa0;K. The activation energy (<i>W</i><sub><i>M</i></sub> <i>= 0.772 eV</i>) confirms the role of structural modifications and Mn³⁺/Mn⁴⁺ interactions in defining the electronic transport properties. Impedance spectroscopy revealed distinct contributions from grain interior and grain boundaries, confirming their individual roles in charge transport. Ba-doped Nd<sub>0.6</sub>Sr<sub>0.4</sub>MnO<sub>3</sub> exhibits a decreasing permittivity at high frequencies and Maxwell-Wagner polarization. Based on its electrical behavior and thermal stability, the Ba-doped Nd₀.₆Sr₀.<sub>4</sub>MnO₃ system shows promise for advanced applications such as resistive switching devices and electronic systems, pending further dedicated studies on magnetic or sensing performance.</p>

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Structural, Electrical, and Impedance Properties of Nd0.6Sr0.3Ba0.1MnO3 Perovskite with Potential for Advanced Electronic Devices

  • Zouhayra Aydi,
  • Ah. Dhahri,
  • M. Jeddi,
  • K. Khirouni,
  • E. Dhahri

摘要

The Nd0.6Sr0.3Ba0.1MnO3 compound was successfully synthesized using the self-combustion method and extensively characterized through structural, morphological, and electrical analyses. This study combines structural, morphological, Direct Courant/Alternative Courant conductivity, and impedance spectroscopy to systematically correlate structural modifications with electronic and dielectric properties, providing a deeper understanding of conduction and polarization mechanisms in doped perovskite manganites. X-ray diffraction refinement confirmed that the material crystallizes in an orthorhombic phase (Pnma space group), with noticeable lattice expansion due to the partial substitution of Sr²⁺ by Ba²⁺. The increase in Mn-O bond length and the modification of the Mn-O-Mn bond angle significantly influence the electronic bandwidth (W/W0= 0.1381), impacting charge transport and electronic properties. Scanning electron microscopy revealed a uniform grain distribution, with an average grain size of 49 nm. The study of direct current and alternating current conductivity demonstrated a strong temperature dependence, where charge transport transitions from an Overlapping Large Polaron Tunneling mechanism at low temperatures (300–500 K) to a Correlated Barrier Hopping model beyond 500 K. The activation energy (WM = 0.772 eV) confirms the role of structural modifications and Mn³⁺/Mn⁴⁺ interactions in defining the electronic transport properties. Impedance spectroscopy revealed distinct contributions from grain interior and grain boundaries, confirming their individual roles in charge transport. Ba-doped Nd0.6Sr0.4MnO3 exhibits a decreasing permittivity at high frequencies and Maxwell-Wagner polarization. Based on its electrical behavior and thermal stability, the Ba-doped Nd₀.₆Sr₀.4MnO₃ system shows promise for advanced applications such as resistive switching devices and electronic systems, pending further dedicated studies on magnetic or sensing performance.