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<p>We report the improvement of semiconducting behaviour, dielectric and magnetic property in Mg<sub>0.5</sub>Ni<sub>0.5</sub>Fe<sub>2−x</sub>Gd<sub>x</sub>O<sub>4</sub> (where x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) synthesized by solid state reaction route. The physical properties have been studied using X-ray diffraction, field effect scanning electron microscopy (FESEM), atomic force microscopy (AFM), UV–Vis spectroscopy, dielectric spectroscopy and magnetic measurement. Rietveld analysis reveals the existence of spinel cubic phase and a secondary phase of GdFeO<sub>3</sub> orthorhombic structure. The Williamson–Hall graph shows the decrease of average crystallite size of spinel phase from 101 to 59&#xa0;nm due to compressive strain with increasing Gd concentration. The FESEM images exhibited an agglomerate of fine particles due to their magnetic nature. The roughness has been observed in AFM depends on the material, type of dopant, and method of processing. UV spectra analysis shows a decreasing trend of band gap after incorporating Gd<sup>3+</sup>. The dielectric constant shows decreasing trend and dielectric loss shows increasing trend with respect to frequency for all the ferrites. The reflection loss graph indicates the optimal doping with Gd occurs at x = 0.3 for maximum absorption making it a suitable candidate for application like electromagnetic interference shielding or radar absorbing material. The nature of the M-H loop for all the specimens show ferromagnetic behavior. The synthesized samples have modified electrical and magnetic behaviors suitable for microwave applications.</p>

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Improvement in Dielectric, Optical and Magnetic Behaviour on Gd3+ Addition To Mg0.5Ni0.5Fe2O4 for Microwave Application

  • 期刊论文

  • 发表日期：

    2025年8月18日

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  • Gorachand Biswal,
  • Babita Ojha,
  • Varsa Purohit,
  • Dhrubananda Behera,
  • Santanu Kumar Behera

摘要

We report the improvement of semiconducting behaviour, dielectric and magnetic property in Mg0.5Ni0.5Fe2−xGdxO4 (where x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) synthesized by solid state reaction route. The physical properties have been studied using X-ray diffraction, field effect scanning electron microscopy (FESEM), atomic force microscopy (AFM), UV–Vis spectroscopy, dielectric spectroscopy and magnetic measurement. Rietveld analysis reveals the existence of spinel cubic phase and a secondary phase of GdFeO3 orthorhombic structure. The Williamson–Hall graph shows the decrease of average crystallite size of spinel phase from 101 to 59 nm due to compressive strain with increasing Gd concentration. The FESEM images exhibited an agglomerate of fine particles due to their magnetic nature. The roughness has been observed in AFM depends on the material, type of dopant, and method of processing. UV spectra analysis shows a decreasing trend of band gap after incorporating Gd3+. The dielectric constant shows decreasing trend and dielectric loss shows increasing trend with respect to frequency for all the ferrites. The reflection loss graph indicates the optimal doping with Gd occurs at x = 0.3 for maximum absorption making it a suitable candidate for application like electromagnetic interference shielding or radar absorbing material. The nature of the M-H loop for all the specimens show ferromagnetic behavior. The synthesized samples have modified electrical and magnetic behaviors suitable for microwave applications.