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<p>This research describes numerical modeling and simulation of a perovskite photodetector (PS-PD) with the COMSOL multiphysics and SCAPS-1D software. The device comprises a mixed halide perovskite absorber layer (MAPbI<sub>3-x</sub>Cl<sub>x</sub>) with bandgap (E<sub>g</sub>) 1.65&#xa0;eV, tin disulfide (SnS<sub>2</sub>) with E<sub>g</sub> of 1.85&#xa0;eV as the electron transport layer (ETL) and zinc phosphide (Zn<sub>3</sub>P<sub>2</sub>) with E<sub>g</sub> of 1.5&#xa0;eV as the hole transport layer (HTL). Fluorine-doped tin oxide (FTO) serves as the front contact while gold (Au) as the back contact. The present study investigates the impact of tuning the thickness of SnS<sub>2</sub>, MAPbI<sub>3-x</sub>Cl<sub>x</sub>, Zn<sub>3</sub>P<sub>2</sub>, along with the perovskite’s defect density, donor concentration, influence of temperature, impact of series and shunt resistance and interface defect densities on the device parameters. Extensive research resulted in the most suitable parameters enhancing device responsivity (R) and detectivity (D). The optimized PS-PD structure shows superior performance, with a current density (J<sub>sc</sub>) of 24.68&#xa0;mA/cm<sup>2</sup>, quantum efficiency (η) of 99.268%, responsivity (R) of 0.543&#xa0;A/W and detectivity (D) of 1.34 × 10<sup>16</sup> Jones. These findings provide valuable insights for designing high-responsive PS-PD.</p>

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High-Performance SnS2/MAPbI3−xClx/Zn3P2 Based Perovskite Photodetector for Next-Generation Applications with Superior Spectral Responsivity and Detectivity

  • 期刊论文

  • 发表日期：

    2025年7月22日

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  • Vikash Mourya,
  • D. K. Dwivedi

摘要

This research describes numerical modeling and simulation of a perovskite photodetector (PS-PD) with the COMSOL multiphysics and SCAPS-1D software. The device comprises a mixed halide perovskite absorber layer (MAPbI3-xClx) with bandgap (Eg) 1.65 eV, tin disulfide (SnS2) with Eg of 1.85 eV as the electron transport layer (ETL) and zinc phosphide (Zn3P2) with Eg of 1.5 eV as the hole transport layer (HTL). Fluorine-doped tin oxide (FTO) serves as the front contact while gold (Au) as the back contact. The present study investigates the impact of tuning the thickness of SnS2, MAPbI3-xClx, Zn3P2, along with the perovskite’s defect density, donor concentration, influence of temperature, impact of series and shunt resistance and interface defect densities on the device parameters. Extensive research resulted in the most suitable parameters enhancing device responsivity (R) and detectivity (D). The optimized PS-PD structure shows superior performance, with a current density (Jsc) of 24.68 mA/cm2, quantum efficiency (η) of 99.268%, responsivity (R) of 0.543 A/W and detectivity (D) of 1.34 × 1016 Jones. These findings provide valuable insights for designing high-responsive PS-PD.