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<p>This study intends to develop of silicon dioxide (SiO<sub>2</sub>)/tantalum carbide (TaC) nanostructures doped polyvinyl alcohol (PVA)-chitosan (CS) blend as novel optical materials for various optoelectronic nanodevices which were characterized by low cost, lightweight, superior optical and chemical properties. The microstructure and optical properties for (PVA-CS/SiO<sub>2</sub>-TaC) nanostructures were analyzed for gamma radiation shielding and optoelectronics applications. The results indicated that the absorption of the (PVA-CS) blend increased by approximately 79.6% with the addition of 6.6wt.% (SiO<sub>2</sub>/TaC) NPs at a wavelength of 280&#xa0;nm. The energy band gap diminishes from 4.7&#xa0;eV for the PVA-CS blend to 3.3&#xa0;eV, and from 4.3&#xa0;eV to 2.3&#xa0;eV for allowed and forbidden transitions, respectively, when the SiO<sub>2</sub>-TaC NPs ratio reached of 6.6 wt%. These findings can be pivotal for the application of PVA-CS/SiO<sub>2</sub>-TaC nanostructures in diverse photonics and optoelectronic devices. The optical properties of (PVA-CS/SiO<sub>2</sub>-TaC) nanostructures were enhanced by the incorporation of (SiO<sub>2</sub>-TaC) NPs, which exhibit a broad spectrum of optical absorption, hence rendering them suitable as exceptional optical materials for photonic applications. The gamma-ray shielding application was examined using a gamma-radiation source (Cs-137). The results demonstrated that the (PVA-CS/SiO<sub>2</sub>-TaC) nanostructures are attractive candidates for many optoelectronic nanodevices.</p>

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Manufacturing and Ameliorating the Morphological, Structural and Optical Features of PVA-CS/SiO2-TaC Futuristic Nanostructures for Radiation Shielding and Photonics Applications

  • 期刊论文

  • 发表日期：

    2025年7月7日

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  • Wissam Obeis Obaid,
  • Ahmed Hashim,
  • Bahaa H. Rabee

摘要

This study intends to develop of silicon dioxide (SiO2)/tantalum carbide (TaC) nanostructures doped polyvinyl alcohol (PVA)-chitosan (CS) blend as novel optical materials for various optoelectronic nanodevices which were characterized by low cost, lightweight, superior optical and chemical properties. The microstructure and optical properties for (PVA-CS/SiO2-TaC) nanostructures were analyzed for gamma radiation shielding and optoelectronics applications. The results indicated that the absorption of the (PVA-CS) blend increased by approximately 79.6% with the addition of 6.6wt.% (SiO2/TaC) NPs at a wavelength of 280 nm. The energy band gap diminishes from 4.7 eV for the PVA-CS blend to 3.3 eV, and from 4.3 eV to 2.3 eV for allowed and forbidden transitions, respectively, when the SiO2-TaC NPs ratio reached of 6.6 wt%. These findings can be pivotal for the application of PVA-CS/SiO2-TaC nanostructures in diverse photonics and optoelectronic devices. The optical properties of (PVA-CS/SiO2-TaC) nanostructures were enhanced by the incorporation of (SiO2-TaC) NPs, which exhibit a broad spectrum of optical absorption, hence rendering them suitable as exceptional optical materials for photonic applications. The gamma-ray shielding application was examined using a gamma-radiation source (Cs-137). The results demonstrated that the (PVA-CS/SiO2-TaC) nanostructures are attractive candidates for many optoelectronic nanodevices.