Scholarlink

<p>In this study, three perovskite halide solar cell device models are proposed and simulated using SCAPS-1D software to explore their performance and potential for practical application. Device 1 features a double-absorber-layer hetero-junction structure combining CsGeI<sub>3</sub> and CsGeI<sub>2</sub>Br, while Devices 2 and 3 utilize single absorber layers of CsGeI<sub>2</sub>Br and CsGeI<sub>3</sub>, respectively. Spiro-OMeTAD and ZnO were employed as the hole and electron transport layer, respectively, in all three structures. Density functional theory (DFT) was used to study the suitability of CsGeI<sub>2</sub>Br and CsGeI<sub>3</sub> as absorber layers in the proposed device models. Then comprehensive optimization of critical device parameters including absorber layer thickness, defect density, interface defect density and operating temperature were performed to enhance device performance. After optimization, Device 1 demonstrated a significant power conversion efficiency of 21.51%, outperforming Devices 2 and 3 which achieved efficiencies of 16.66% and 15.95% respectively. The superior performance of Device 1 highlights the potential advantages of a double-absorber-layer configuration in improving light absorption and charge carrier dynamics. These results provide a solid foundation for further experimental investigations and feasibility of CsGeI<sub>3</sub> and CsGeI<sub>2</sub>Br-based perovskite structures in the development of high-efficiency solar cells.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

DFT-Guided SCAPS-1D Simulation of Single vs. Double Absorber Layer CsGeI3/CsGeI2Br Perovskite Solar Cells

  • 期刊论文

  • 发表日期：

    2025年6月11日

查看全文
  • Himanshu S. Mishra,
  • Ipsita Mohanty,
  • L. Biswal,
  • S. Mangal,
  • Mukaddar Sk,
  • M. Das Pattanayak

摘要

In this study, three perovskite halide solar cell device models are proposed and simulated using SCAPS-1D software to explore their performance and potential for practical application. Device 1 features a double-absorber-layer hetero-junction structure combining CsGeI3 and CsGeI2Br, while Devices 2 and 3 utilize single absorber layers of CsGeI2Br and CsGeI3, respectively. Spiro-OMeTAD and ZnO were employed as the hole and electron transport layer, respectively, in all three structures. Density functional theory (DFT) was used to study the suitability of CsGeI2Br and CsGeI3 as absorber layers in the proposed device models. Then comprehensive optimization of critical device parameters including absorber layer thickness, defect density, interface defect density and operating temperature were performed to enhance device performance. After optimization, Device 1 demonstrated a significant power conversion efficiency of 21.51%, outperforming Devices 2 and 3 which achieved efficiencies of 16.66% and 15.95% respectively. The superior performance of Device 1 highlights the potential advantages of a double-absorber-layer configuration in improving light absorption and charge carrier dynamics. These results provide a solid foundation for further experimental investigations and feasibility of CsGeI3 and CsGeI2Br-based perovskite structures in the development of high-efficiency solar cells.