Scholarlink

<p>This study comprehensively investigates the structural, morphological, and electrical properties of Sr<sub>2</sub>TiZrO<sub>6</sub> (<i>SrTZr</i>) double perovskite synthesized via a solid-state reaction method. X-ray diffraction (<i>XRD</i>) analysis confirmed the formation of a single-phase tetragonal structure (<i>space group P4mm</i>) with high crystallinity. Scanning electron microscopy (<i>SEM</i>) revealed a dense microstructure with uniform grain distribution. Crystallite size, calculated using the Scherrer formula, ranges from 35 to 40&#xa0;nm, influencing grain boundary area and charge transport. Dielectric measurements show significant interfacial polarization, indicating potential for high-frequency applications. Impedance spectroscopy and electrical modulus analysis revealed non-Debye behavior, thermally activated conductivity, and hopping conduction. The calculated activation energy suggests a thermally induced hopping process, with values E<sub>a1</sub>=832 meV (<i>high temperature</i>) and E<sub>a2</sub>=503 meV (<i>low temperature</i>). Dielectric loss increases with temperature, likely due to enhanced conductivity. These findings highlight the promising potential of SrTZr double perovskite for applications in advanced electronics, particularly where low dielectric loss and efficient energy storage are required.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Synthesis and Comprehensive Characterization of Sr2TiZrO6 Double Perovskite: Insights into Dielectric and Electrical Properties for Advanced Applications

  • 期刊论文

  • 发表日期：

    2025年3月7日

查看全文
  • M. Madani,
  • Safa Mnefgui,
  • K. Omri

摘要

This study comprehensively investigates the structural, morphological, and electrical properties of Sr2TiZrO6 (SrTZr) double perovskite synthesized via a solid-state reaction method. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase tetragonal structure (space group P4mm) with high crystallinity. Scanning electron microscopy (SEM) revealed a dense microstructure with uniform grain distribution. Crystallite size, calculated using the Scherrer formula, ranges from 35 to 40 nm, influencing grain boundary area and charge transport. Dielectric measurements show significant interfacial polarization, indicating potential for high-frequency applications. Impedance spectroscopy and electrical modulus analysis revealed non-Debye behavior, thermally activated conductivity, and hopping conduction. The calculated activation energy suggests a thermally induced hopping process, with values Ea1=832 meV (high temperature) and Ea2=503 meV (low temperature). Dielectric loss increases with temperature, likely due to enhanced conductivity. These findings highlight the promising potential of SrTZr double perovskite for applications in advanced electronics, particularly where low dielectric loss and efficient energy storage are required.