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<p>The ferroelectric polymer PVDF and its copolymer have garnered significant attention in the field of dielectric energy storage due to their high permittivity and high breakdown strength. However, their high dielectric loss limits their application in the field of energy storage. Thus, reducing the dielectric loss of films while maintaining a high permittivity presents a challenge. In this paper, NiBDC and CuBDC were synthesized via solvothermal method and added into P(VDF-HFP) films, respectively. The effect of MOFs on the structure and dielectric properties of P(VDF-HFP) films were investigated. The results showed that the addition of MOFs could significantly increase the crystallization temperature while decreasing crystallinity and crystal size of the films. Tanδ decreased from 0.059 to 0.042 (10&#xa0;k&#xa0;Hz, 18&#xa0;°C) for the film with 10% CuBDC addition as coordinatively unsaturated metal centers in MOFs acted as electron traps that reduced tanδ and conductivity of the films. In addition, for the film with 1% CuBDC, the breakdown strength increased from 341.5 MV/m to 369.5 MV/m, the efficiency of the films increased from 87.7 to 93.9%.</p>

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Effect of 2D-MOFs on Dielectric Properties of P(VDF-HFP) Films

  • 期刊论文

  • 发表日期：

    2025年1月3日

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  • Siqi Zhang,
  • Shu Wu,
  • Jinglei Li,
  • Qi Wang,
  • Bowen Yang,
  • Mengxiang Guan,
  • Guirong Peng,
  • Xiaojia Zhao

摘要

The ferroelectric polymer PVDF and its copolymer have garnered significant attention in the field of dielectric energy storage due to their high permittivity and high breakdown strength. However, their high dielectric loss limits their application in the field of energy storage. Thus, reducing the dielectric loss of films while maintaining a high permittivity presents a challenge. In this paper, NiBDC and CuBDC were synthesized via solvothermal method and added into P(VDF-HFP) films, respectively. The effect of MOFs on the structure and dielectric properties of P(VDF-HFP) films were investigated. The results showed that the addition of MOFs could significantly increase the crystallization temperature while decreasing crystallinity and crystal size of the films. Tanδ decreased from 0.059 to 0.042 (10 k Hz, 18 °C) for the film with 10% CuBDC addition as coordinatively unsaturated metal centers in MOFs acted as electron traps that reduced tanδ and conductivity of the films. In addition, for the film with 1% CuBDC, the breakdown strength increased from 341.5 MV/m to 369.5 MV/m, the efficiency of the films increased from 87.7 to 93.9%.