Synthesis and Augmented Morphological and Optical Properties of Si₃N₄-TiN Inorganic Nanostructures Doped PVP for Promising Optoelectronics Applications

Films of PVP-Si₃N₄-TiN new nanostructures have been fabricated to use in different promising nanoelectronics and energy storage fields. The absorbance and transmittance spectra for PVP-Si₃N₄-TiN nanostructures’ were recorded at wavelength ranged (340 nm to 840 nm). The results showed the increase of concentration from 12.5 g/L to 37.5 g/L causes to increase in the absorption about 63.8% at λ = 380 nm but the transmission reduced. This behaviour lead to make the PVP-Si₃N₄-TiN nanostructures are suitable for various renewable fields. The energy gap of PVP-Si₃N₄-TiN nanostructures reduced from 3.1 eV to 2.4 eV when the concentration increased from 12.5 g/L to 37.5 g/L. The other optical factors were increased with rising concentration. The results of energy storage application indicated that the melting time decreased about 65.25% with an increase in concentration from 12.5 g/L to 37.5 g/L which make them appropriate for energy storage and nanoelectronics fields.