Fabrication and Tuning the Structural and Optical Features of SiO₂/ Si₃N₄ Nanomaterials Doped PS for Promising Optoelectronics Applications

This study aims to develop of silica (SiO₂)/silicon nitride(Si₃N₄) nanomaterials doped polystyrene(PS) for use in a variety of electronics and optical nanodevices. By casting method, the films of (PS-SiO₂-Si₃N₄) were coursed. The structure characteristics of (PS-SiO₂- Si₃N₄)nanostructures were studied including optical microscopy(OM) and FTIR, and optical characteristics of (PS-SiO₂-Si₃N₄) nanostructures also were studied. The OM confirmed that good distribution of (SiO₂/Si₃N₄)NPs inside the matrix of PS and the FTIR indicates that there is a physical interaction between the polymer (PS) and (SiO₂-Si₃N₄) NPs. The optical characteristics were measured at wavelengths ranging from 260 to 760 nm. The results showed when the ratio reached 6.9 wt% from the SiO₂and Si₃N₄ NPs that the transmission(T) reduced while the absorption(A) increased, this capability qualifies it for use in a variety of optical fields. The energy gap(E_g) of PS when the SiO₂ and Si₃N₄NPs content reached 6.9 wt% decreased, because of this behaviour, (PS-SiO₂- Si₃N₄) nanostructures are regarded as crucial for optical and optoelectronic nanodevices. With increasing concentrations of SiO₂ and Si₃N₄NPs, the optical constants, absorption coefficient, refractive index, extinction coefficient, real and imaginary dielectric constants, and optical conductivity rise. Lastly, the results confirmed the optical properties study that the (PS-SiO₂-Si₃N₄) nanostructures might be used in a variety of nanoelectronics applications.