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<p>Pulsed nanosecond powerful ion beam treatment of monocrystalline silicon Si, amorphized in the process of continuous ion implantation, is an efficient tool of restoring the Si crystal lattice and electrically activating the implanted impurity through rapid melting and crystallization processes. In this study, we simulated the heating of an implanted (amorphous) 0.1-μm-thick Si layer on a 350-μm-thick single-crystal Si substrate using a high-power ion beam. The simulation was performed in the COMSOL Multiphysics software environment by numerically solving the heat conduction equation using the finite element method. The time dependences of the maximum heating temperature over the irradiated area and the Si melt thickness were obtained for various ion pulse energy densities (<i>W</i> = 0.6–2.0 J/cm<sup>2</sup>).</p>

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Two-Dimensional Modeling of Pulsed Heating of Amorphized Silicon by High-Power Ion Beams

  • 期刊论文

  • 发表日期：

    2026年6月30日

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  • R. I. Batalov,
  • E. A. Marfin,
  • D. D. Zaitsev

摘要

Pulsed nanosecond powerful ion beam treatment of monocrystalline silicon Si, amorphized in the process of continuous ion implantation, is an efficient tool of restoring the Si crystal lattice and electrically activating the implanted impurity through rapid melting and crystallization processes. In this study, we simulated the heating of an implanted (amorphous) 0.1-μm-thick Si layer on a 350-μm-thick single-crystal Si substrate using a high-power ion beam. The simulation was performed in the COMSOL Multiphysics software environment by numerically solving the heat conduction equation using the finite element method. The time dependences of the maximum heating temperature over the irradiated area and the Si melt thickness were obtained for various ion pulse energy densities (W = 0.6–2.0 J/cm2).