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<p>Hybrid organic-inorganic metal halide materials attract attention due to their potential optoelectronic applications. In this report, we undertook the follow-up characterization of the hybrid material (C<sub>2</sub>H<sub>5</sub>NH<sub>3</sub>)<sub>2</sub>[SbBr<sub>5</sub>]. Crystallographic characterization showed that this compound consists of corner-sharing SbBr<sub>6</sub> octahedra, which form zig-zag chains that are separated by the organic molecules. We found that, unlike in the previous study, the organic molecules do not exhibit an apparent disorder. Infrared (IR) and Raman spectroscopy confirm the composition of this compound. To further explore the material’s properties, we prepared two samples with and without Te. UV-Vis spectroscopy showed the bandgap of the material changed by approximately 0.30&#xa0;eV upon tellurium incorporation. To elaborate on this effect, we performed DFT calculations for both the doped and undoped chemical systems. These calculations agreed well with our experimental observations and support the notion that tellurium causes a bandgap reduction in (C<sub>2</sub>H<sub>5</sub>NH<sub>3</sub>)<sub>2</sub>[SbBr<sub>5</sub>].</p> Graphical Abstract <p></p>

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Characterization of Hybrid Material (C2H5NH3)2[SbBr5]

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Jared Solovei,
  • Aleksandra D. Valueva,
  • Vladislav V. Klepov

摘要

Hybrid organic-inorganic metal halide materials attract attention due to their potential optoelectronic applications. In this report, we undertook the follow-up characterization of the hybrid material (C2H5NH3)2[SbBr5]. Crystallographic characterization showed that this compound consists of corner-sharing SbBr6 octahedra, which form zig-zag chains that are separated by the organic molecules. We found that, unlike in the previous study, the organic molecules do not exhibit an apparent disorder. Infrared (IR) and Raman spectroscopy confirm the composition of this compound. To further explore the material’s properties, we prepared two samples with and without Te. UV-Vis spectroscopy showed the bandgap of the material changed by approximately 0.30 eV upon tellurium incorporation. To elaborate on this effect, we performed DFT calculations for both the doped and undoped chemical systems. These calculations agreed well with our experimental observations and support the notion that tellurium causes a bandgap reduction in (C2H5NH3)2[SbBr5].

Graphical Abstract