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<p>In this work, the synthesis and characterization of Cu-doped ZnS<sub>x</sub>Se<sub>1-x</sub> thin films via a cost-effective chemical method have been reported. The concentration of Cu is varied from 1 to 7% (by volume) at a fixed temperature of 60&#xa0;°C. X-ray diffraction (XRD) studies revealed that the as-deposited films are polycrystalline and exhibit a cubic structure with (111) preferred orientation. The obtained films exhibit a homogeneous surface morphology with nearly spherical nanograins, as observed using a field-emission scanning electron microscope (FESEM). The synthesized films exhibited thicknesses in the range of 323.2–393.2&#xa0;nm. The electrical conductivity of the prepared films is of the order of 10⁻<sup>5</sup> (Ω·cm)⁻<sup>1</sup> at room temperature, and the maximum conductivity obtained was 1.76 × 10⁻<sup>5</sup> (Ω·cm)⁻<sup>1</sup>. The films exhibited an average optical transmittance of 70–80% in the visible region, and it gradually decreases with increasing Cu doping content. The energy band gap was obtained in the range of 3.34–3.18&#xa0;eV. Thus, the incorporation of Cu in the ZnSSe lattice showed a substantial effect on the optical, morphological, and electrical properties of the films. The deposited films exhibit high transparency and a wide energy band gap, making them promising candidates for various future optoelectronic devices and photovoltaic applications.</p>

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Cu doped ZnSxSe1-x ternary alloy thin films: a comprehensive study on microstructural, optical, and electrical modifications

  • 期刊论文

  • 发表日期：

    2026年8月5日

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  • Mridusmita Boruah,
  • Prasanta Kumar Saikia

摘要

In this work, the synthesis and characterization of Cu-doped ZnSxSe1-x thin films via a cost-effective chemical method have been reported. The concentration of Cu is varied from 1 to 7% (by volume) at a fixed temperature of 60 °C. X-ray diffraction (XRD) studies revealed that the as-deposited films are polycrystalline and exhibit a cubic structure with (111) preferred orientation. The obtained films exhibit a homogeneous surface morphology with nearly spherical nanograins, as observed using a field-emission scanning electron microscope (FESEM). The synthesized films exhibited thicknesses in the range of 323.2–393.2 nm. The electrical conductivity of the prepared films is of the order of 10⁻5 (Ω·cm)⁻1 at room temperature, and the maximum conductivity obtained was 1.76 × 10⁻5 (Ω·cm)⁻1. The films exhibited an average optical transmittance of 70–80% in the visible region, and it gradually decreases with increasing Cu doping content. The energy band gap was obtained in the range of 3.34–3.18 eV. Thus, the incorporation of Cu in the ZnSSe lattice showed a substantial effect on the optical, morphological, and electrical properties of the films. The deposited films exhibit high transparency and a wide energy band gap, making them promising candidates for various future optoelectronic devices and photovoltaic applications.