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<p>SiCN-based materials are typical negative temperature coefficient (NTC) materials with excellent high-temperature stability. However, most reported SiCN ceramics and films suffer from low B values or limited service temperatures. To address this issue, SiAlCN thick films were fabricated by screen printing for high-temperature sensing. Samples with different ASB contents and film thicknesses were prepared, and their microstructure and high-temperature electrical properties were characterized. The results indicate that aluminum addition greatly enhances the crack resistance. The SiAlCN-1 sample presents fewer micro-defects and optimal high-temperature resistance stability. Moreover, the effects of film thickness on electrical properties are discussed. It is found that the stability of SiAlCN films at high temperature increases with increasing film thickness. Specifically, the three-layer SiAlCN-1 film achieves a low average resistance drift rate of 0.39%/h at 1000&#xa0;°C. During five cyclic tests from 300 to 1000&#xa0;°C, the SiAlCN thermistor shows good coincidence with a reference thermocouple, and its average temperature error is only 1.6%. The SiAlCN-1 thermistor exhibits a B<sub>300/600</sub> value of 5775&#xa0;K, realizing a combination of high B value and high working temperature that is superior to most reported SiCN-based films. The excellent properties of the SiAlCN thick films demonstrate great potential for temperature sensing applications at high temperature.</p>

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SiAlCN NTC thick films with superior high-temperature stability for temperature sensing applications

  • 期刊论文

  • 发表日期：

    2026年8月5日

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  • Ruichao Chen,
  • Dingkang Peng,
  • Bin Peng

摘要

SiCN-based materials are typical negative temperature coefficient (NTC) materials with excellent high-temperature stability. However, most reported SiCN ceramics and films suffer from low B values or limited service temperatures. To address this issue, SiAlCN thick films were fabricated by screen printing for high-temperature sensing. Samples with different ASB contents and film thicknesses were prepared, and their microstructure and high-temperature electrical properties were characterized. The results indicate that aluminum addition greatly enhances the crack resistance. The SiAlCN-1 sample presents fewer micro-defects and optimal high-temperature resistance stability. Moreover, the effects of film thickness on electrical properties are discussed. It is found that the stability of SiAlCN films at high temperature increases with increasing film thickness. Specifically, the three-layer SiAlCN-1 film achieves a low average resistance drift rate of 0.39%/h at 1000 °C. During five cyclic tests from 300 to 1000 °C, the SiAlCN thermistor shows good coincidence with a reference thermocouple, and its average temperature error is only 1.6%. The SiAlCN-1 thermistor exhibits a B300/600 value of 5775 K, realizing a combination of high B value and high working temperature that is superior to most reported SiCN-based films. The excellent properties of the SiAlCN thick films demonstrate great potential for temperature sensing applications at high temperature.