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<p>The development of environmentally benign semiconductor materials with tunable electrical and optoelectronic properties is essential for next-generation sustainable electronic devices. In this study, pristine and 5&#xa0;mol% Lu<sup>3+</sup>-doped BaZrS<sub>3</sub> chalcogenide perovskite nanoparticles were synthesized through a polymer-assisted sol–gel sulfurization route to investigate the influence of rare-earth incorporation on their structural and device characteristics. Powder X-ray diffraction confirmed the formation of phase-pure orthorhombic BaZrS<sub>3</sub> without detectable secondary phases after Lu incorporation, while slight peak shifts and broadening indicated lattice distortion associated with substitutional doping. Energy-dispersive X-ray spectroscopy verified the successful incorporation of Lu into the host lattice. Transmission electron microscopy revealed anisotropic nanostructures for both samples, with the Lu-doped material exhibiting modified particle morphology consistent with changes in crystal growth behavior. Comparative electrical measurements demonstrated higher current under both dark and illuminated conditions for the Lu-doped sample than for pristine BaZrS<sub>3</sub>. Similarly, transient current–time measurements exhibited reproducible ON/OFF switching with a larger photocurrent change (Δ<i>I</i><sub><i>ph</i></sub>) and improved switching stability following Lu incorporation. The wavelength-dependent photocurrent response showed enhanced visible-light sensitivity over the investigated spectral range, while field-effect transistor measurements revealed increased drain current together with well-defined linear and saturation regions under both positive and negative gate bias. The enhanced electrical and optoelectronic performance is attributed to Lu-induced modification of the local crystal environment, which facilitates charge transport without altering the orthorhombic perovskite framework. These findings demonstrate that controlled rare-earth incorporation provides an effective strategy for tuning the functional properties of lead-free BaZrS<sub>3</sub> and highlights its potential for low-power electronics, photodetectors, and sustainable optoelectronic applications.</p>

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Next-generation green electronics: defect-tuned Lu–BaZrS3 nanomaterials for high-performance optoelectronics and energy-conscious devices

  • 期刊论文

  • 发表日期：

    2026年7月29日

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  • P. Vivek

摘要

The development of environmentally benign semiconductor materials with tunable electrical and optoelectronic properties is essential for next-generation sustainable electronic devices. In this study, pristine and 5 mol% Lu3+-doped BaZrS3 chalcogenide perovskite nanoparticles were synthesized through a polymer-assisted sol–gel sulfurization route to investigate the influence of rare-earth incorporation on their structural and device characteristics. Powder X-ray diffraction confirmed the formation of phase-pure orthorhombic BaZrS3 without detectable secondary phases after Lu incorporation, while slight peak shifts and broadening indicated lattice distortion associated with substitutional doping. Energy-dispersive X-ray spectroscopy verified the successful incorporation of Lu into the host lattice. Transmission electron microscopy revealed anisotropic nanostructures for both samples, with the Lu-doped material exhibiting modified particle morphology consistent with changes in crystal growth behavior. Comparative electrical measurements demonstrated higher current under both dark and illuminated conditions for the Lu-doped sample than for pristine BaZrS3. Similarly, transient current–time measurements exhibited reproducible ON/OFF switching with a larger photocurrent change (ΔIph) and improved switching stability following Lu incorporation. The wavelength-dependent photocurrent response showed enhanced visible-light sensitivity over the investigated spectral range, while field-effect transistor measurements revealed increased drain current together with well-defined linear and saturation regions under both positive and negative gate bias. The enhanced electrical and optoelectronic performance is attributed to Lu-induced modification of the local crystal environment, which facilitates charge transport without altering the orthorhombic perovskite framework. These findings demonstrate that controlled rare-earth incorporation provides an effective strategy for tuning the functional properties of lead-free BaZrS3 and highlights its potential for low-power electronics, photodetectors, and sustainable optoelectronic applications.