Scholarlink

<p>In this work, a triple-layer Pd/SnO<sub>2</sub>/WO<sub>3</sub> hydrogen sensor was designed and deposited on anodic aluminum oxide (AAO). By integrating both a heterojunction and a Schottky junction, an additional electron depletion layer has been added, and then systematic optimization of the SnO<sub>2</sub> thickness enables effective modulation of the interfacial coupling between the Pd/SnO<sub>2</sub> and SnO<sub>2</sub>/WO<sub>3</sub>, as well as conduction channels, thereby affecting the energy band SnO<sub>2</sub> and its hydrogen sensing performance. The optimized sensor achieves approximately twice the response (Rs) of the Pd/WO<sub>3</sub>/AAO sensor and significantly faster recovery than the Pd/SnO<sub>2</sub>/AAO counterpart upon exposure to 3% H<sub>2</sub>, with a detection limit as low as 100&#xa0;ppb at a low operating temperature of 75&#xa0;°C, alongside good selectivity and stability. Furthermore, the magnetron sputtering fabrication process is scalable and compatible with standard microfabrication, offering a cost-effective route for mass production.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Enhanced hydrogen sensing performance by modulating energy band of Pd/SnO2/WO3 triple-layer thin film sensor

  • 期刊论文

  • 发表日期：

    2026年8月1日

查看全文
  • Yu Zhang,
  • Simin Wu,
  • Duoer Tang,
  • Yao Wang,
  • Junye Zhang,
  • Hongchuan Jiang,
  • Xiaohui Zhao,
  • Xinwu Deng

摘要

In this work, a triple-layer Pd/SnO2/WO3 hydrogen sensor was designed and deposited on anodic aluminum oxide (AAO). By integrating both a heterojunction and a Schottky junction, an additional electron depletion layer has been added, and then systematic optimization of the SnO2 thickness enables effective modulation of the interfacial coupling between the Pd/SnO2 and SnO2/WO3, as well as conduction channels, thereby affecting the energy band SnO2 and its hydrogen sensing performance. The optimized sensor achieves approximately twice the response (Rs) of the Pd/WO3/AAO sensor and significantly faster recovery than the Pd/SnO2/AAO counterpart upon exposure to 3% H2, with a detection limit as low as 100 ppb at a low operating temperature of 75 °C, alongside good selectivity and stability. Furthermore, the magnetron sputtering fabrication process is scalable and compatible with standard microfabrication, offering a cost-effective route for mass production.