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<p>Zn-doped Y<sub>2</sub>Ce<sub>2</sub>O<sub>7</sub> (YCZO) thin films were prepared using a sol–gel spin-coating approach and investigated as the active switching layer in resistive random-access memory (RRAM) devices. In comparison with pristine Y<sub>2</sub>Ce<sub>2</sub>O<sub>7</sub> (YCO) devices exhibiting an endurance of 576 cycles, Zn-doped YCZO devices show noticeably improved switching stability, with the as-deposited x = 0.05 sample offering the most favorable overall performance. Further thermal optimization indicates that annealing at 300 °C provides the most pronounced improvement in device endurance, increasing it to 1698 cycles, whereas annealing at higher temperatures results in evident performance degradation. Building on this optimized condition, post-metallization annealing (PMA) at 300 °C extends the endurance to 2460 cycles, together with a memory window exceeding 10<sup>3</sup> and stable data retention beyond 10<sup>8</sup>&#xa0;s. Structural and spectroscopic analyses indicate that Zn incorporation primarily regulates local defect chemistry without inducing crystallization, whereas PMA gives rise to a thin AlO<sub>X</sub> interfacial layer that restricts oxygen-ion migration. Overall, this work highlights how the combined use of compositional tuning and interfacial engineering can effectively stabilize conductive filament dynamics, enabling reliable and high-endurance amorphous oxide RRAM devices.</p>

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Enhanced switching reliability in sol–gel derived Y2Ce2O7 RRAM through optimized Zn doping and thermal treatments

  • 期刊论文

  • 发表日期：

    2026年7月22日

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  • Chia-Chien Wu,
  • Cheng-Liang Huang

摘要

Zn-doped Y2Ce2O7 (YCZO) thin films were prepared using a sol–gel spin-coating approach and investigated as the active switching layer in resistive random-access memory (RRAM) devices. In comparison with pristine Y2Ce2O7 (YCO) devices exhibiting an endurance of 576 cycles, Zn-doped YCZO devices show noticeably improved switching stability, with the as-deposited x = 0.05 sample offering the most favorable overall performance. Further thermal optimization indicates that annealing at 300 °C provides the most pronounced improvement in device endurance, increasing it to 1698 cycles, whereas annealing at higher temperatures results in evident performance degradation. Building on this optimized condition, post-metallization annealing (PMA) at 300 °C extends the endurance to 2460 cycles, together with a memory window exceeding 103 and stable data retention beyond 108 s. Structural and spectroscopic analyses indicate that Zn incorporation primarily regulates local defect chemistry without inducing crystallization, whereas PMA gives rise to a thin AlOX interfacial layer that restricts oxygen-ion migration. Overall, this work highlights how the combined use of compositional tuning and interfacial engineering can effectively stabilize conductive filament dynamics, enabling reliable and high-endurance amorphous oxide RRAM devices.