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<p>We performed precise measurements of laser crystallization patterns in a rapid phase-change film (Ge-Sb-Te chalcogenide). The crystalline line patterns created by laser irradiation were observed under an optical microscope to measure the brightness change (<i>ΔB</i>) from the amorphous phase. The <i>ΔB</i> was found to be between 10 and 30. Furthermore, the line patterns were evaluated using a phase-shifting interferometric microscope (PSI) and an atomic force microscope (AFM). Different depths were observed. The difference in depth between PSI and AFM ranged from 0 to 3&#xa0;nm. The amorphous phase crystallizes into the fcc phase by laser heating below 200&#xa0;°C. AFM detects only the volume contraction due to crystallization. On the other hand, PSI detects both the change in surface morphology and optical properties (<i>n</i>, <i>k</i>), which is thought to explain the observation of different depths. These results are valuable not only for the development of phase-change devices but also for the development of standard scales using phase-changes.</p>

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Depth evaluation of laser crystallization patterns in Ge-Sb-Te phase-change films using PSI and AFM: toward the development of a phase-change standard ruler

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月23日

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  • Kentaro Sugawara,
  • Tamihiro Gotoh

摘要

We performed precise measurements of laser crystallization patterns in a rapid phase-change film (Ge-Sb-Te chalcogenide). The crystalline line patterns created by laser irradiation were observed under an optical microscope to measure the brightness change (ΔB) from the amorphous phase. The ΔB was found to be between 10 and 30. Furthermore, the line patterns were evaluated using a phase-shifting interferometric microscope (PSI) and an atomic force microscope (AFM). Different depths were observed. The difference in depth between PSI and AFM ranged from 0 to 3 nm. The amorphous phase crystallizes into the fcc phase by laser heating below 200 °C. AFM detects only the volume contraction due to crystallization. On the other hand, PSI detects both the change in surface morphology and optical properties (n, k), which is thought to explain the observation of different depths. These results are valuable not only for the development of phase-change devices but also for the development of standard scales using phase-changes.