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<p>Silver selenide (Ag<sub>2</sub>Se) thin films are promising for flexible thermoelectrics due to outstanding room-temperature thermoelectric and mechanical properties. Herein, β-Ag<sub>2</sub>Se films are fabricated by magnetron sputtering combined with solution selenization and post-annealing at varying temperatures, whose structure, morphology, components and electrical performances are systematically characterized. All films maintain pure orthorhombic β-Ag<sub>2</sub>Se. 150 °C annealing reinforces the (013) preferred orientation preferred orientation, while annealing-temperatures over 300&#xa0;°C cause severe Se loss and structural degradation. Transport performance measurements reveal that high-temperature annealing boosts conductivity via Se-deficiency-induced high carrier concentration. However, considering the inherently inverse correlation between electrical conductivity and Seebeck coefficient, the 150&#xa0;℃-annealed sample ultimately presents a superior room-temperature power factor over 2200 μWm<sup>−</sup><sup>1</sup>K<sup>−</sup><sup>2</sup>. A 5-leg thermoelectric generator assembled with the optimized Ag<sub>2</sub>Se thin-film yields 83.94 Wm<sup>−2</sup> power density under 60 K temperature difference and stably harvests human body heat, showing great prospects for wearable self-powered electronics.</p>

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Moderate thermal annealing as a facile strategy to boost thermoelectric performance of Ag2Se thin films for self-powered wearable devices

  • 期刊论文

  • 发表日期：

    2026年7月20日

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  • Hao Jiang,
  • Xiaoyu Jiang,
  • Yuliang Liu,
  • Xiaowei Zhang

摘要

Silver selenide (Ag2Se) thin films are promising for flexible thermoelectrics due to outstanding room-temperature thermoelectric and mechanical properties. Herein, β-Ag2Se films are fabricated by magnetron sputtering combined with solution selenization and post-annealing at varying temperatures, whose structure, morphology, components and electrical performances are systematically characterized. All films maintain pure orthorhombic β-Ag2Se. 150 °C annealing reinforces the (013) preferred orientation preferred orientation, while annealing-temperatures over 300 °C cause severe Se loss and structural degradation. Transport performance measurements reveal that high-temperature annealing boosts conductivity via Se-deficiency-induced high carrier concentration. However, considering the inherently inverse correlation between electrical conductivity and Seebeck coefficient, the 150 ℃-annealed sample ultimately presents a superior room-temperature power factor over 2200 μWm−1K−2. A 5-leg thermoelectric generator assembled with the optimized Ag2Se thin-film yields 83.94 Wm−2 power density under 60 K temperature difference and stably harvests human body heat, showing great prospects for wearable self-powered electronics.