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<p>Aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) passivation of highly crystalline n-type 4H-SiC epitaxial layer was achieved using pulsed laser deposition, yielding highly rectifying devices without requiring post-deposition annealing. Large-area Ni/Al<sub>2</sub>O<sub>3</sub>/4H-SiC Schottky-type diodes fabricated on the passivated epilayers exhibited an effective barrier height of 1.3&#xa0;eV. Capacitance–voltage measurements performed at 1&#xa0;MHz revealed a flat-band potential of 2.3&#xa0;V, indicating the presence of fixed oxide charge in the Al<sub>2</sub>O<sub>3</sub> layer. Frequency-dependent capacitance measurements further showed that slow interface states do not significantly perturb device behavior, confirming effective surface passivation. These interface characteristics enable efficient self-biased operation (0&#xa0;V applied bias), yielding an energy resolution of 3.3% for 5.486&#xa0;MeV alpha particles, while an optimized reverse bias of −&#xa0;40&#xa0;V results in a high energy resolution of 0.5%. Deep-level transient spectroscopy measurements identified Z<sub>1/2</sub> electron traps as the dominant factor limiting the ultimate energy resolution. The deeper traps consistent with oxidation-induced defects are unlikely to significantly influence the room-temperature detector performance under the present experimental conditions. The results demonstrate that Al<sub>2</sub>O<sub>3</sub> passivation provides a low-cost and effective route to enabling high-resolution, self-biased radiation detection in 4H-SiC devices, suitable for radiation monitoring in space and nuclear reactor core environments.</p>

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Charged particle detection using Al2O3-passivated Ni/(n)4H-SiC Schottky diodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月16日

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  • Krishna C. Mandal,
  • Jarod Stefurak,
  • Ritwik Nag,
  • Sandeep K. Chaudhuri,
  • Dongkyu Lee,
  • Ebenezer Seesi,
  • Santosh K. Balijepalli,
  • Utpal N. Roy

摘要

Aluminum oxide (Al2O3) passivation of highly crystalline n-type 4H-SiC epitaxial layer was achieved using pulsed laser deposition, yielding highly rectifying devices without requiring post-deposition annealing. Large-area Ni/Al2O3/4H-SiC Schottky-type diodes fabricated on the passivated epilayers exhibited an effective barrier height of 1.3 eV. Capacitance–voltage measurements performed at 1 MHz revealed a flat-band potential of 2.3 V, indicating the presence of fixed oxide charge in the Al2O3 layer. Frequency-dependent capacitance measurements further showed that slow interface states do not significantly perturb device behavior, confirming effective surface passivation. These interface characteristics enable efficient self-biased operation (0 V applied bias), yielding an energy resolution of 3.3% for 5.486 MeV alpha particles, while an optimized reverse bias of − 40 V results in a high energy resolution of 0.5%. Deep-level transient spectroscopy measurements identified Z1/2 electron traps as the dominant factor limiting the ultimate energy resolution. The deeper traps consistent with oxidation-induced defects are unlikely to significantly influence the room-temperature detector performance under the present experimental conditions. The results demonstrate that Al2O3 passivation provides a low-cost and effective route to enabling high-resolution, self-biased radiation detection in 4H-SiC devices, suitable for radiation monitoring in space and nuclear reactor core environments.