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<p>This study presents a novel high-performance gas sensor for the detection of ammonia (NH₃) at ambient temperatures, utilizing the unique characteristics of a p–n heterojunction comprising Cu₂O–ITO (Copper(I) oxide-Indium Tin Oxide). The main innovation in this work is the in-situ conversion of a hierarchical CuO nanostructure to Cu₂O during electrophoretic deposition, as verified by X-ray photoelectron spectroscopy (XPS). The conversion results in an unusual sensing mechanism: the electrical resistance decreases when exposed to the reducing gas NH₃, unlike conventional p-type oxide semiconductor sensors, which show an increase in resistance. The improvement in the sensing performance results from the integration of two critical factors: the hierarchical nanosheet-nanorod structure and efficient charge transfer between Cu₂O and ITO. The sensor displays a response of ~ 7.52% to 20&#xa0;ppm NH₃ with a quick response time (~ 19&#xa0;s) and recovery time (~ 17&#xa0;s). The sensor is highly repeatable and reversible without any external activation process, such as ultraviolet radiation or heating. In addition, it has a sensitivity of 0.231&#xa0;ppm⁻<sup>1</sup>, an excellent linear response (R<sup>2</sup> = 0.98658), and a detection limit of 18.138&#xa0;ppm at 20–200&#xa0;ppm. Moreover, the sensor exhibits high selectivity for NH₃ and stable operation across different humidity levels. The results indicate that Cu₂O–ITO heterojunctions exhibit high efficiency and low power consumption for future room-temperature gas-sensing applications.</p>

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Room-temperature ammonia sensor based on in situ reduction of CuO hierarchical nanostructures to fabricate Cu2O–ITO p–n heterojunction for enhanced selectivity and stability

  • 期刊论文

  • 发表日期：

    2026年7月20日

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  • S. Zimad Husain Hashmi,
  • Sitakshi Gupta,
  • Dev Raj Singh,
  • G. B. V. S. Lakshmi,
  • Amarjeet Kaur,
  • Pratima R. Solanki

摘要

This study presents a novel high-performance gas sensor for the detection of ammonia (NH₃) at ambient temperatures, utilizing the unique characteristics of a p–n heterojunction comprising Cu₂O–ITO (Copper(I) oxide-Indium Tin Oxide). The main innovation in this work is the in-situ conversion of a hierarchical CuO nanostructure to Cu₂O during electrophoretic deposition, as verified by X-ray photoelectron spectroscopy (XPS). The conversion results in an unusual sensing mechanism: the electrical resistance decreases when exposed to the reducing gas NH₃, unlike conventional p-type oxide semiconductor sensors, which show an increase in resistance. The improvement in the sensing performance results from the integration of two critical factors: the hierarchical nanosheet-nanorod structure and efficient charge transfer between Cu₂O and ITO. The sensor displays a response of ~ 7.52% to 20 ppm NH₃ with a quick response time (~ 19 s) and recovery time (~ 17 s). The sensor is highly repeatable and reversible without any external activation process, such as ultraviolet radiation or heating. In addition, it has a sensitivity of 0.231 ppm⁻1, an excellent linear response (R2 = 0.98658), and a detection limit of 18.138 ppm at 20–200 ppm. Moreover, the sensor exhibits high selectivity for NH₃ and stable operation across different humidity levels. The results indicate that Cu₂O–ITO heterojunctions exhibit high efficiency and low power consumption for future room-temperature gas-sensing applications.