Scholarlink

<p>A comprehensive study of structure, microstructure, dielectric, transport, and electrical properties of Sn and Zr co-doped by small amounts at the B-site of Ba<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> (BST), prepared through a high temperature mixed oxide route, is reported in this paper. The structural analysis by XRD revealed that the compound retains a cubic crystal structure (space group pm-3&#xa0;m) with a minor amount of a secondary phase, Ba<sub>5</sub>Sn<sub>3</sub>. SEM micrograph shows a dense packing of large, irregularly shaped grains. The studies conducted on electronic properties showed the dielectric constant (~ 340) of the compound at 25&#xa0;°C (1&#xa0;kHz) and loss (~ 0.01). The electrical properties could be characterized over a very broad range of frequencies (1&#xa0;kHz to 1&#xa0;MHz) and temperatures (25 to 400&#xa0;°C). The results indicate that the compound exhibits negative temperature coefficient of resistance (NTCR) characteristics. The activation energy for the compound was estimated from the temperature dependence of the relaxation time (Ea ~ 0.91&#xa0;eV) and from DC conductivity using the Arrhenius Eq.&#xa0;(0.92&#xa0;eV). The results indicate the types of charge carriers involved in the relaxation processes and the role of oxygen vacancies in DC conduction. The frequency-dependent AC conductivities were plotted at various temperatures and were shown to obey Jonscher’s law. The temperature dependence of the frequency exponent (n) was shown to be in good agreement with the correlated barrier hopping (CBH) model for the AC conduction mechanism. These findings may provide sufficient information for studying the compound as a candidate for use in NTCR electronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Dielectric and charge transport properties of Sn-Zr Co-doped Ba0.5Sr0.5TiO3: temperature-dependent correlated barrier hopping and relaxation mechanism

  • 期刊论文

  • 发表日期：

    2026年7月14日

查看全文
  • M. Das Pattanayak,
  • L. Biswal,
  • Niladri Roy,
  • Banarji Behera,
  • Amit Kumar Parida,
  • Santosh Ku.Satpathy,
  • S. S. Hota

摘要

A comprehensive study of structure, microstructure, dielectric, transport, and electrical properties of Sn and Zr co-doped by small amounts at the B-site of Ba0.5Sr0.5TiO3 (BST), prepared through a high temperature mixed oxide route, is reported in this paper. The structural analysis by XRD revealed that the compound retains a cubic crystal structure (space group pm-3 m) with a minor amount of a secondary phase, Ba5Sn3. SEM micrograph shows a dense packing of large, irregularly shaped grains. The studies conducted on electronic properties showed the dielectric constant (~ 340) of the compound at 25 °C (1 kHz) and loss (~ 0.01). The electrical properties could be characterized over a very broad range of frequencies (1 kHz to 1 MHz) and temperatures (25 to 400 °C). The results indicate that the compound exhibits negative temperature coefficient of resistance (NTCR) characteristics. The activation energy for the compound was estimated from the temperature dependence of the relaxation time (Ea ~ 0.91 eV) and from DC conductivity using the Arrhenius Eq. (0.92 eV). The results indicate the types of charge carriers involved in the relaxation processes and the role of oxygen vacancies in DC conduction. The frequency-dependent AC conductivities were plotted at various temperatures and were shown to obey Jonscher’s law. The temperature dependence of the frequency exponent (n) was shown to be in good agreement with the correlated barrier hopping (CBH) model for the AC conduction mechanism. These findings may provide sufficient information for studying the compound as a candidate for use in NTCR electronic devices.