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<p>While considering materials for photovoltaics, aluminum ferrite (AlFeO<sub>3</sub>) has immense technological value because all its constituent elements are earth-abundant. Orthorhombic AlFeO<sub>3</sub> has a low bandgap (2&#xa0;eV). However, the presence of a high concentration of defects can make even low bandgap materials ineffective for photovoltaics. The primary objective of this work was to experimentally determine the kind of intrinsic point defects present in orthorhombic AlFeO<sub>3</sub> when it is prepared by the co-precipitation method. By analyzing the results of multiple characterization techniques, we concluded that orthorhombic AlFeO<sub>3</sub>, when prepared by the co-precipitation method,&#xa0;has a high concentration of aluminum vacancies and oxygen vacancies but a negligible concentration of antisites. The fact that orthorhombic AlFeO<sub>3</sub> is likely to have a high concentration of vacancies means that thin films of orthorhombic AlFeO<sub>3</sub> should be made by techniques which produce low defect concentrations, if photovoltaic application is the ultimate objective.</p>

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Aluminum vacancies, oxygen vacancies, and the absence of antisites in orthorhombic AlFeO3: a multi-technique defect characterization study

  • 期刊论文

  • 发表日期：

    2026年7月20日

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  • Smarak Rath,
  • Ashok Kumar Yadav,
  • Rajashri Urkude,
  • Dibyendu Bhattacharya,
  • Biplab Ghosh,
  • Tiju Thomas

摘要

While considering materials for photovoltaics, aluminum ferrite (AlFeO3) has immense technological value because all its constituent elements are earth-abundant. Orthorhombic AlFeO3 has a low bandgap (2 eV). However, the presence of a high concentration of defects can make even low bandgap materials ineffective for photovoltaics. The primary objective of this work was to experimentally determine the kind of intrinsic point defects present in orthorhombic AlFeO3 when it is prepared by the co-precipitation method. By analyzing the results of multiple characterization techniques, we concluded that orthorhombic AlFeO3, when prepared by the co-precipitation method, has a high concentration of aluminum vacancies and oxygen vacancies but a negligible concentration of antisites. The fact that orthorhombic AlFeO3 is likely to have a high concentration of vacancies means that thin films of orthorhombic AlFeO3 should be made by techniques which produce low defect concentrations, if photovoltaic application is the ultimate objective.