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<p>Ultra-wide-bandgap β-Ga<sub>2</sub>O<sub>3</sub> films are advantageous for next-generation optoelectronic devices due to their wide bandgap and compatibility with scalable manufacturing processes. This study fabricated 20&#xa0;nm polycrystalline β-Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates via solution-based mist chemical vapor deposition (mist-CVD), a cost-effective, non-vacuum growth method. The structural, morphological, and optical characterization confirmed the successful formation of continuous β-Ga<sub>2</sub>O<sub>3</sub> films. To examine carrier transport in ultrathin mist-CVD-grown β-Ga<sub>2</sub>O<sub>3</sub>, lateral metal–semiconductor-metal (MSM) devices with Ni/Au and Ti/Al/Ni/Au contacts were constructed utilizing channel spacings between 5 and 50&#xa0;μm. The devices showed a turn-on voltage of 3.2&#xa0;V and increased leakage currents in the 10<sup>–12</sup> A range. The electrical measurements revealed poor rectification (0.9 at ± 10&#xa0;V), suggesting that the transport is significantly influenced by non-ideal effects associated with the ultrathin polycrystalline film. This study indicates that grain-boundary defects, surface and interface states, contact-related constraints, and field-assisted conduction strongly influence the observed electrical behavior. While adequate rectification was not accomplished, this study serves as a proof of concept for ultrathin mist-CVD β-Ga<sub>2</sub>O<sub>3</sub> films and provides a scalable, entirely non-vacuum method for incorporating β-Ga<sub>2</sub>O<sub>3</sub> into lateral device architectures.</p>

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Asymmetric contacts reveal microstructure-limited transport in ultrathin mist-CVD β-Ga2O3 MSM devices

  • 期刊论文

  • 发表日期：

    2026年7月10日

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  • Abhay Kumar Mondal,
  • Jamal Kazmi,
  • Muhammad Qaiser Zakaria,
  • Sanku Niu,,
  • Muhammad Aniq Shazni Mohammad Haniff,
  • Ray-Hua Horng,
  • Abdul Ghaffar,
  • Mohd Ambri Mohamed

摘要

Ultra-wide-bandgap β-Ga2O3 films are advantageous for next-generation optoelectronic devices due to their wide bandgap and compatibility with scalable manufacturing processes. This study fabricated 20 nm polycrystalline β-Ga2O3 thin films on c-plane sapphire substrates via solution-based mist chemical vapor deposition (mist-CVD), a cost-effective, non-vacuum growth method. The structural, morphological, and optical characterization confirmed the successful formation of continuous β-Ga2O3 films. To examine carrier transport in ultrathin mist-CVD-grown β-Ga2O3, lateral metal–semiconductor-metal (MSM) devices with Ni/Au and Ti/Al/Ni/Au contacts were constructed utilizing channel spacings between 5 and 50 μm. The devices showed a turn-on voltage of 3.2 V and increased leakage currents in the 10–12 A range. The electrical measurements revealed poor rectification (0.9 at ± 10 V), suggesting that the transport is significantly influenced by non-ideal effects associated with the ultrathin polycrystalline film. This study indicates that grain-boundary defects, surface and interface states, contact-related constraints, and field-assisted conduction strongly influence the observed electrical behavior. While adequate rectification was not accomplished, this study serves as a proof of concept for ultrathin mist-CVD β-Ga2O3 films and provides a scalable, entirely non-vacuum method for incorporating β-Ga2O3 into lateral device architectures.