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<p>The current work focused on understanding the electronic and magnetotransport properties of the Bi<sub>2-x</sub>Sb<sub>x</sub>Te<sub>3</sub> (x = 0, 1, 2) series of topological insulator single crystals. The samples were synthesized using the modified Bridgman technique. X-ray diffraction measurements confirmed the formation of the rhombohedral phase with the R-3&#xa0;m space group. A temperature-dependent resistivity study at 0 Tesla and 9 Tesla revealed the metallic character of all the samples, with a T<sup>2</sup>-like temperature dependence, which was attributed to the Fermi liquid behavior. Magnetoresistance (MR%) was around 1000% for Bi<sub>2</sub>Te<sub>3</sub>, 140% for BiSbTe<sub>3</sub>, and 70% for Sb<sub>2</sub>Te<sub>3</sub> at 9 Tesla and 2&#xa0;K, which decreased for Bi<sub>2</sub>Te<sub>3</sub> to 500% at 50&#xa0;K, while for the others, it remained almost unchanged. The semi-classical two-band conduction model was applied for quantitative analysis of magnetoresistivity and Hall resistivity. The Carrier concentrations of all the samples were of the order of 10<sup>18</sup>&#xa0;cm<sup>−3</sup>, with BiSbTe<sub>3</sub> having nearly equal hole and electron concentrations. The mobilities of all samples fell within the range of 10<sup>4</sup> cm<sup>2</sup>/V.S, which was quite high. All these phenomena were described in deference to various underlying transport mechanisms.</p>

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Two-band transport and large magnetoresistance in Bi2-xSbxTe3 crystals

  • 期刊论文

  • 发表日期：

    2026年7月14日

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  • Nabarun Bera,
  • Sachin Sharma,
  • Hemant Singh,
  • M. D. Anoop,
  • Deepika Kanwar,
  • Ayush R. Mokashi,
  • Nisha Yadav,
  • Balram Tripathi,
  • Sandeep Gupta,
  • Dinesh K. Shukla,
  • Subhayan Mandal,
  • Manoj Kumar

摘要

The current work focused on understanding the electronic and magnetotransport properties of the Bi2-xSbxTe3 (x = 0, 1, 2) series of topological insulator single crystals. The samples were synthesized using the modified Bridgman technique. X-ray diffraction measurements confirmed the formation of the rhombohedral phase with the R-3 m space group. A temperature-dependent resistivity study at 0 Tesla and 9 Tesla revealed the metallic character of all the samples, with a T2-like temperature dependence, which was attributed to the Fermi liquid behavior. Magnetoresistance (MR%) was around 1000% for Bi2Te3, 140% for BiSbTe3, and 70% for Sb2Te3 at 9 Tesla and 2 K, which decreased for Bi2Te3 to 500% at 50 K, while for the others, it remained almost unchanged. The semi-classical two-band conduction model was applied for quantitative analysis of magnetoresistivity and Hall resistivity. The Carrier concentrations of all the samples were of the order of 1018 cm−3, with BiSbTe3 having nearly equal hole and electron concentrations. The mobilities of all samples fell within the range of 104 cm2/V.S, which was quite high. All these phenomena were described in deference to various underlying transport mechanisms.