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<p>This paper examines the morphological, crystallographic, and magnetic properties of the CuMnSn (wt. %) Heusler alloy under thermal treatment. Surface analysis showed that the alloy had an austenitic phase structure at room temperature. Magnetization measurements revealed that the CuMnSn alloy exhibits ferromagnetic behavior. The saturation magnetization (M<sub>s</sub>) of the alloy was determined approximately 1.5&#xa0;emu/g. Following characterization, a novel Schottky-type CuMnSn/p-Si/Al photodiode was fabricated using the CuMnSn Heusler alloy. The electrical performance of the fabricated Schottky diode was investigated under dark and various light intensity conditions, covering a voltage range between + 1&#xa0;V and –1&#xa0;V. Diode parameters were calculated from the current–voltage (I–V) and current–time (I–t) characteristics using Cheung’s functions and thermionic emission (TE) theory. Based on TE theory, the ideality factor (n) was determined as 2.13 and 2.43, while the barrier height (Φ<sub>b</sub>) was found to be 0.794 and 0.534&#xa0;eV under dark and illuminated (100 mW/cm<sup>2</sup>), conditions, respectively. These results were evaluated in the context of existing literature. The outcomes indicate that the CuMnSn-based diode has significant potential for optoelectronic applications.</p>

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Design and photodiode performance characterization of a novel Cu-based Heusler alloy Schottky diode

  • 期刊论文

  • 发表日期：

    2026年7月9日

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  • E. Aldirmaz

摘要

This paper examines the morphological, crystallographic, and magnetic properties of the CuMnSn (wt. %) Heusler alloy under thermal treatment. Surface analysis showed that the alloy had an austenitic phase structure at room temperature. Magnetization measurements revealed that the CuMnSn alloy exhibits ferromagnetic behavior. The saturation magnetization (Ms) of the alloy was determined approximately 1.5 emu/g. Following characterization, a novel Schottky-type CuMnSn/p-Si/Al photodiode was fabricated using the CuMnSn Heusler alloy. The electrical performance of the fabricated Schottky diode was investigated under dark and various light intensity conditions, covering a voltage range between + 1 V and –1 V. Diode parameters were calculated from the current–voltage (I–V) and current–time (I–t) characteristics using Cheung’s functions and thermionic emission (TE) theory. Based on TE theory, the ideality factor (n) was determined as 2.13 and 2.43, while the barrier height (Φb) was found to be 0.794 and 0.534 eV under dark and illuminated (100 mW/cm2), conditions, respectively. These results were evaluated in the context of existing literature. The outcomes indicate that the CuMnSn-based diode has significant potential for optoelectronic applications.