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<p>In this study, CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> (CCTO) ceramics co-doped with Gd<sup>3+</sup> at the Ca<sup>2+</sup> site and Zn<sup>2+</sup> at the Cu<sup>2+</sup> site were synthesized through solid-state reaction method to investigate their structural, microstructural, and dielectric properties. X-ray diffraction confirmed that CCTO remained the dominant phase with a body-centered cubic structure, though minor secondary phases such as CuO and CaTiO<sub>3</sub> were also detected in the co-doped samples. Scanning electron microscopy showed reduced grain sizes (1.91–1.53&#xa0;µm) with doping, linked to solute drag effects. Dielectric spectroscopy demonstrated high permittivity (~ 10<sup>4</sup>) and low loss (tanδ &lt; 0.1) in undoped CCTO, while co-doped samples exhibited frequency-stable ε′ and suppressed tanδ, correlating with increased grain-boundary resistance (R<sub>gb</sub> ~ 10<sup>9</sup> Ω.cm). Complex impedance analysis supported the Internal Barrier Layer Capacitance model, with Arrhenius plots revealing thermally activated conduction (E<sub>g</sub> ~ 0.038–0.120&#xa0;eV, and E<sub>gb</sub> ~ 0.457–0.707&#xa0;eV). The sample with (Gd and Zn = 0.03) showed great promise for integration into high-permittivity microelectronic components due to optimal dielectric characteristics.</p>

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Hopping conduction and Maxwell–Wagner effects in Gd3+/Zn2+ co-doped CaCu3Ti4O12: a dielectric spectroscopy study

  • 期刊论文

  • 发表日期：

    2026年6月29日

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  • M. Ehthishamul Haque,
  • M. Jose

摘要

In this study, CaCu3Ti4O12 (CCTO) ceramics co-doped with Gd3+ at the Ca2+ site and Zn2+ at the Cu2+ site were synthesized through solid-state reaction method to investigate their structural, microstructural, and dielectric properties. X-ray diffraction confirmed that CCTO remained the dominant phase with a body-centered cubic structure, though minor secondary phases such as CuO and CaTiO3 were also detected in the co-doped samples. Scanning electron microscopy showed reduced grain sizes (1.91–1.53 µm) with doping, linked to solute drag effects. Dielectric spectroscopy demonstrated high permittivity (~ 104) and low loss (tanδ < 0.1) in undoped CCTO, while co-doped samples exhibited frequency-stable ε′ and suppressed tanδ, correlating with increased grain-boundary resistance (Rgb ~ 109 Ω.cm). Complex impedance analysis supported the Internal Barrier Layer Capacitance model, with Arrhenius plots revealing thermally activated conduction (Eg ~ 0.038–0.120 eV, and Egb ~ 0.457–0.707 eV). The sample with (Gd and Zn = 0.03) showed great promise for integration into high-permittivity microelectronic components due to optimal dielectric characteristics.