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<p>The (Sr<sub>0.85</sub>Ba<sub>0.15</sub>)(Mn<sub>0.50</sub>Nb<sub>0.50</sub>)O<sub>3</sub> compound was prepared by a solid-state method. Initial Rietveld analyses indicate the formation of a single-phase tetragonal structure (space group I 4/mcm) with lattice parameters a = b = 5.6249&#xa0;Å and c = 7.9527&#xa0;Å. Microstructure was examined using FESEM, which indicated that the material is polycrystalline, with an average grain size of 2.77&#xa0;µm. The material exhibited a high dielectric constant of ~ 105 and a loss of 15.25 at 1&#xa0;kHz and 25&#xa0;°C. Impedance study of the support semiconducting nature of the material. Modulus analysis as a function of frequency confirmed the presence of non-Debye relaxation processes. The AC conductivity of the material increases at both elevated frequencies and elevated temperatures, indicating a thermally activated hopping-type conduction mechanism. The activation energy obtained from the DC conductivity study is ~ 0.3671&#xa0;eV, whereas that from impedance is ~ 0.30&#xa0;eV, indicating the involvement of two types of charge carriers. The Nyquist plots confirm that the material has both grain and grain boundary effects. Moreover, the compound exhibits negative temperature coefficient (NTC) thermistor properties and thus could serve as a good candidate for a temperature sensor.</p>

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Studies of structural, microstructural, dielectric, and impedance properties of (Sr0.85Ba0.15)(Mn0.50Nb0.50)O3 perovskite for electronics device applications

  • 期刊论文

  • 发表日期：

    2026年7月3日

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  • Srikanta Behera,
  • Raj Mohan Mohanty,
  • Raj Kishore Mishra,
  • Sabyasachi Parida

摘要

The (Sr0.85Ba0.15)(Mn0.50Nb0.50)O3 compound was prepared by a solid-state method. Initial Rietveld analyses indicate the formation of a single-phase tetragonal structure (space group I 4/mcm) with lattice parameters a = b = 5.6249 Å and c = 7.9527 Å. Microstructure was examined using FESEM, which indicated that the material is polycrystalline, with an average grain size of 2.77 µm. The material exhibited a high dielectric constant of ~ 105 and a loss of 15.25 at 1 kHz and 25 °C. Impedance study of the support semiconducting nature of the material. Modulus analysis as a function of frequency confirmed the presence of non-Debye relaxation processes. The AC conductivity of the material increases at both elevated frequencies and elevated temperatures, indicating a thermally activated hopping-type conduction mechanism. The activation energy obtained from the DC conductivity study is ~ 0.3671 eV, whereas that from impedance is ~ 0.30 eV, indicating the involvement of two types of charge carriers. The Nyquist plots confirm that the material has both grain and grain boundary effects. Moreover, the compound exhibits negative temperature coefficient (NTC) thermistor properties and thus could serve as a good candidate for a temperature sensor.