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<p>Aluminium-doped zinc oxide (AZO) thin films were deposited on Corning glass substrates by RF sputtering at different substrate temperatures while keeping other deposition parameters constant. The structural, optical, electrical, and chemical properties of the films were systematically investigated using XRD, UV–Vis spectroscopy, sheet resistance measurements, and X-ray photoelectron spectroscopy (XPS). All films exhibited high optical transparency in the visible region with an almost constant optical band gap of ~ 3.25 ± 0.03&#xa0;eV. A significant reduction in sheet resistance to 8.57 Ω/☐ was observed for films deposited at 250&#xa0;°C, which is attributed to improved crystallinity. XPS analysis confirmed the successful incorporation of Al into the ZnO lattice and revealed changes in the chemical states and work function with increasing substrate temperature. The film deposited at 250&#xa0;°C exhibited an enhanced work function compared to the film deposited at 100&#xa0;°C, indicating improved electronic properties suitable for transparent conducting oxide applications in optoelectronic devices.</p>

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Influence of substrate temperature in RF sputtering on the structural and optoelectronic properties of AZO thin films

  • 期刊论文

  • 发表日期：

    2026年6月29日

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  • Tulsiram Madkami,
  • Rahul Rahul,
  • Pratima Agarwal

摘要

Aluminium-doped zinc oxide (AZO) thin films were deposited on Corning glass substrates by RF sputtering at different substrate temperatures while keeping other deposition parameters constant. The structural, optical, electrical, and chemical properties of the films were systematically investigated using XRD, UV–Vis spectroscopy, sheet resistance measurements, and X-ray photoelectron spectroscopy (XPS). All films exhibited high optical transparency in the visible region with an almost constant optical band gap of ~ 3.25 ± 0.03 eV. A significant reduction in sheet resistance to 8.57 Ω/☐ was observed for films deposited at 250 °C, which is attributed to improved crystallinity. XPS analysis confirmed the successful incorporation of Al into the ZnO lattice and revealed changes in the chemical states and work function with increasing substrate temperature. The film deposited at 250 °C exhibited an enhanced work function compared to the film deposited at 100 °C, indicating improved electronic properties suitable for transparent conducting oxide applications in optoelectronic devices.