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<p>Antimony selenide (Sb<sub>2</sub>Se<sub>3</sub>), an eco-friendly and cost-efficient photovoltaic material, has garnered significant research interest for overcoming its inherent limitations of low conductivity and carrier density. In this study, Cl/Bi dual-doped Sb<sub>2</sub>Se<sub>3</sub> thin films were fabricated via magnetron sputtering. The doping process modified the conduction type of Sb<sub>2</sub>Se<sub>3</sub>, yielding n-type (Sb<sub>2</sub>Se<sub>3</sub>-Cl) and p-type (Sb<sub>2</sub>Se<sub>3</sub>-Bi) semiconductors. These layers were stacked into a quasi-homojunction structure to construct thin-film solar cells with the configuration FTO/Sb<sub>2</sub>Se<sub>3</sub>-Cl/Sb<sub>2</sub>Se<sub>3</sub>-Bi/Al. Through optimized heat treatment, the short-circuit current density (<i>J</i><sub>sc</sub>) and photoelectric conversion efficiency (<i>η</i>) were significantly improved, exceeding 18.2&#xa0;mA&#xa0;cm<sup>−2</sup> and 2.26%. This enhancement is attributed to the quasi-homojunction’s superior interfacial lattice matching and reduced defect density, demonstrating its potential for high-performance Sb<sub>2</sub>Se<sub>3</sub> photovoltaics.</p>

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Design and performance optimization of quasi-homojunction solar cells based on Cl/Bi-doped Sb2Se3-stacked bilayer

  • 期刊论文

  • 发表日期：

    2026年6月22日

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  • Yang Xu,
  • Xue Luo,
  • Yifan Zhao,
  • Donglou Ren,
  • Michel Cathelinaud,
  • Xvsheng Qiao,
  • Xianghua Zhang,
  • Xianping Fan

摘要

Antimony selenide (Sb2Se3), an eco-friendly and cost-efficient photovoltaic material, has garnered significant research interest for overcoming its inherent limitations of low conductivity and carrier density. In this study, Cl/Bi dual-doped Sb2Se3 thin films were fabricated via magnetron sputtering. The doping process modified the conduction type of Sb2Se3, yielding n-type (Sb2Se3-Cl) and p-type (Sb2Se3-Bi) semiconductors. These layers were stacked into a quasi-homojunction structure to construct thin-film solar cells with the configuration FTO/Sb2Se3-Cl/Sb2Se3-Bi/Al. Through optimized heat treatment, the short-circuit current density (Jsc) and photoelectric conversion efficiency (η) were significantly improved, exceeding 18.2 mA cm−2 and 2.26%. This enhancement is attributed to the quasi-homojunction’s superior interfacial lattice matching and reduced defect density, demonstrating its potential for high-performance Sb2Se3 photovoltaics.