Ultrasonic-assisted Cu-to-Cu direct bonding via asymmetric plasma surface modification
摘要
This study presents a novel approach to high-performance ultrasonic Cu-to-Cu direct bonding by introducing an innovative asymmetric plasma surface modification technique. While conventional ultrasonic bonding struggles with large-area metal-to-metal bonding, our research demonstrates that selectively modifying the surface conditions of electro-deposited copper pillars through plasma pre-treatment with proper source gases can achieve rapid and low-temperature bonding. While both Ar-5%H2 and N2-5%H2 plasma treatments can elevate surface energy, hardness, and roughness, the influence of these parameters on ultrasonic bonding is highly multifaceted. N2-5%H2 plasma produced a surface that was optimally roughened and moderately hardened for bonding. The core breakthrough lies in the asymmetric treatment of the bonding pairs (hard upper versus soft lower samples), which fundamentally alters the mechanical and electrical integrity of the joints. By uniquely integrating empirical data with finite element analysis (FEA), it can be proposed that pairing optimized asymmetric surface conditions with the maximum compressive stress applied during the ultrasonic process is essential for achieving robust bonding. Ultimately, this novel methodology achieves a remarkably low specific contact resistance of 0.49 × 10⁻⁸ Ω·cm2 at the bonding interface.