Scholarlink

<p>Yellow luminescence (YL) in GaN, typically centered around ~&#xa0;2.2 eV, is a widely observed defect-related emission whose exact origin remains a subject of ongoing discussion. While it is commonly associated with bulk-related defects such as carbon-related defects, gallium vacancies, or impurity complexes, near-surface modifications induced by processing techniques also influence its characteristics. In this work, the impact of inductively coupled plasma (ICP) etching on the optical, structural, and surface chemical properties of GaN is systematically investigated using photoluminescence (PL), atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Comparative analysis between as-grown and ICP-etched samples reveals noticeable variations in defect-related emission intensity, which is associated with modifications in the near-surface region. These changes significantly affect the surface morphology, as evidenced by the AFM measurements. XPS measurements indicate changes in surface chemical states and band bending following etching, while Raman and HRXRD analyses suggest slight variations in stress and structural properties. These results collectively suggest that ICP etching influences near-surface characteristics, which in turn affect defect-related optical emission. The study provides a comprehensive experimental assessment of ICP-induced modifications in GaN using complementary characterization techniques.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Investigating the yellow luminescence (YL) in GaN processing and its application as a metric for assessing plasma etch quality

  • 期刊论文

  • 发表日期：

    2026年6月18日

查看全文
  • Priyesh Kumar,
  • RK Kaneriya,
  • Chiranjit Karmakar,
  • Sharad Kumar Jain,
  • Vishal Singrole,
  • R Jesuraja,
  • Santanu Sinha,
  • Punam Pradeep Kumar,
  • Jhuma Saha

摘要

Yellow luminescence (YL) in GaN, typically centered around ~ 2.2 eV, is a widely observed defect-related emission whose exact origin remains a subject of ongoing discussion. While it is commonly associated with bulk-related defects such as carbon-related defects, gallium vacancies, or impurity complexes, near-surface modifications induced by processing techniques also influence its characteristics. In this work, the impact of inductively coupled plasma (ICP) etching on the optical, structural, and surface chemical properties of GaN is systematically investigated using photoluminescence (PL), atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Comparative analysis between as-grown and ICP-etched samples reveals noticeable variations in defect-related emission intensity, which is associated with modifications in the near-surface region. These changes significantly affect the surface morphology, as evidenced by the AFM measurements. XPS measurements indicate changes in surface chemical states and band bending following etching, while Raman and HRXRD analyses suggest slight variations in stress and structural properties. These results collectively suggest that ICP etching influences near-surface characteristics, which in turn affect defect-related optical emission. The study provides a comprehensive experimental assessment of ICP-induced modifications in GaN using complementary characterization techniques.