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<p>A one-step hydrothermal method was used to synthesize multi-defect layered MoS<sub>2</sub> (denoted MD-MoS<sub>2</sub>-1:7) on fluorine-doped tin oxide (FTO) substrates. The solution ratio of ammonium molybdate tetrahydrate ((NH<sub>4</sub>)<sub>6</sub>Mo<sub>7</sub>O<sub>24</sub>·4H<sub>2</sub>O) to thiourea (CH<sub>4</sub>N<sub>2</sub>S) was systematically varied to control defect density. The synthesized MoS<sub>2</sub> was subsequently integrated as the resistive layer in an Ag/MD-MoS<sub>2</sub>-1:7/FTO memristor architecture. Reversible switching between abnormal and normal bipolar resistive behaviors was demonstrated within a single device through precise modulation of the V<sub>SET-stop</sub> amplitude. The richness of sulfur vacancies in multi-defect MoS<sub>2</sub> facilitates the regulation of ion migration through the application of voltage, facilitating the formation of stable conductive pathway within the memristor structure. This approach enabled the development of resistive switching devices demonstrating 1,000-cycle endurance. Systematic analysis of current–voltage characteristics revealed that the bipolar resistive switching originates from sulfur vacancy-mediated conductive pathway formation/rupture processes. The optimized memristor exhibited &gt; 1,000 stable switching cycles with &lt; 2% performance variation, meeting industrial reliability requirements.</p>

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Understanding and modulation of resistive switching behaviors in multi-defect MoS2-based devices

  • 期刊论文

  • 发表日期：

    2026年6月17日

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  • Jinyu Tian,
  • Lifang Hu,
  • Xiaoyue Mi,
  • Jiapeng Li,
  • Bo Zhang,
  • Wenbin Liu

摘要

A one-step hydrothermal method was used to synthesize multi-defect layered MoS2 (denoted MD-MoS2-1:7) on fluorine-doped tin oxide (FTO) substrates. The solution ratio of ammonium molybdate tetrahydrate ((NH4)6Mo7O24·4H2O) to thiourea (CH4N2S) was systematically varied to control defect density. The synthesized MoS2 was subsequently integrated as the resistive layer in an Ag/MD-MoS2-1:7/FTO memristor architecture. Reversible switching between abnormal and normal bipolar resistive behaviors was demonstrated within a single device through precise modulation of the VSET-stop amplitude. The richness of sulfur vacancies in multi-defect MoS2 facilitates the regulation of ion migration through the application of voltage, facilitating the formation of stable conductive pathway within the memristor structure. This approach enabled the development of resistive switching devices demonstrating 1,000-cycle endurance. Systematic analysis of current–voltage characteristics revealed that the bipolar resistive switching originates from sulfur vacancy-mediated conductive pathway formation/rupture processes. The optimized memristor exhibited > 1,000 stable switching cycles with < 2% performance variation, meeting industrial reliability requirements.