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<p>BiFeO<sub>3</sub> (BFO) thin films were fabricated on FTO substrates by a sol–gel spin-coating method and integrated into vertical FTO/BFO/ITO devices. The effects of annealing temperature and annealing time on phase stability, microstructure, optical absorption, and photoresponse were systematically investigated. X-ray diffraction (XRD) results show that increasing the annealing temperature from 500 to 600&#xa0;°C improves the crystallinity of the perovskite BFO phase, whereas prolonged annealing at 600&#xa0;°C for 60&#xa0;min leads to the formation of Bi<sub>2</sub>O<sub>3</sub> and Bi<sub>2</sub>Fe<sub>4</sub>O<sub>9</sub> secondary phases. SEM observations reveal enhanced grain growth at higher annealing temperatures, and UV–Vis analysis gives optical bandgaps of 2.50–2.62&#xa0;eV. Under simulated AM 1.5G illumination, the film annealed at 600&#xa0;°C for 30&#xa0;min exhibits the strongest photoresponse among the investigated samples, with a short-circuit current density (<i>J</i><sub>sc</sub>) of 40.86&#xa0;μA cm<sup>−2</sup> and an open-circuit voltage (<i>V</i><sub>oc</sub>) of 0.65&#xa0;V. The enhanced response is attributed to a favorable balance among dominant BFO phase formation, crystallization, optical absorption, and suppression of secondary phases. These results suggest that appropriate annealing treatment provides a simple and practical route for improving the quality and device response of undoped sol–gel-derived BFO thin films in FTO/BFO/ITO devices.</p>

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Effects of annealing conditions on phase stability and photoresponse of sol–gel-derived BiFeO3 thin films

  • 期刊论文

  • 发表日期：

    2026年6月22日

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  • Weihao Wu,
  • Junying Yu,
  • Zhongxiang Zheng,
  • Wenchuan Li,
  • Rongli Gao,
  • Xiaoling Deng,
  • Wei Cai,
  • Chunlin Fu

摘要

BiFeO3 (BFO) thin films were fabricated on FTO substrates by a sol–gel spin-coating method and integrated into vertical FTO/BFO/ITO devices. The effects of annealing temperature and annealing time on phase stability, microstructure, optical absorption, and photoresponse were systematically investigated. X-ray diffraction (XRD) results show that increasing the annealing temperature from 500 to 600 °C improves the crystallinity of the perovskite BFO phase, whereas prolonged annealing at 600 °C for 60 min leads to the formation of Bi2O3 and Bi2Fe4O9 secondary phases. SEM observations reveal enhanced grain growth at higher annealing temperatures, and UV–Vis analysis gives optical bandgaps of 2.50–2.62 eV. Under simulated AM 1.5G illumination, the film annealed at 600 °C for 30 min exhibits the strongest photoresponse among the investigated samples, with a short-circuit current density (Jsc) of 40.86 μA cm−2 and an open-circuit voltage (Voc) of 0.65 V. The enhanced response is attributed to a favorable balance among dominant BFO phase formation, crystallization, optical absorption, and suppression of secondary phases. These results suggest that appropriate annealing treatment provides a simple and practical route for improving the quality and device response of undoped sol–gel-derived BFO thin films in FTO/BFO/ITO devices.