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<p>The illumination-stress instability remains a critical bottleneck for amorphous oxide thin film transistors (TFTs). Here, we propose a rare-earth (RE) doped bilayer-channel structure to effectively enhance mobility while minimizing the deterioration of stability in solution-processed zinc-tin oxide (ZTO) TFTs. The microstructural analyses reveal that while RE dopants suppress oxygen vacancies, Nd retards sol–gel polycondensation, inducing residual hydroxyl traps and morphological degradation. Conversely, La facilitates thorough dehydroxylation, yielding an ultra-smooth defect-minimized network. Consequently, the La: ZTO TFT demonstrates enhanced NBIS stability compared to pristine ZTO. To overcome carrier suppression from RE doping, the bilayer-channel TFT is fabricated, in which the highly conductive ZTO underlayer ensures efficient transport, while the dense La: ZTO capping layer acts as a barrier to passivate interfacial defects and shield against ambient interactions. The ZTO/La: ZTO TFT exhibits excellent switching performance, while the mobility is more than 2 times that of single-layer devices, and small N/PBIS V<sub>th</sub> shifts (-3.55 /3.37&#xa0;V). The RE-doped interface regulation strategy provides a highly viable pathway for fabricating stable, high-performance oxide semiconductor electronics.</p>

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Interface regulation and defect passivation in rare-earth doped bilayer-channel thin film transistors for enhanced illumination stability

  • 期刊论文

  • 发表日期：

    2026年6月20日

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  • Hongxu Cui,
  • Meng Xu,
  • Wentao Luo,
  • Huajie Li,
  • Longlong Chen,
  • Cong Peng,
  • Xifeng Li,
  • Jianhua Zhang

摘要

The illumination-stress instability remains a critical bottleneck for amorphous oxide thin film transistors (TFTs). Here, we propose a rare-earth (RE) doped bilayer-channel structure to effectively enhance mobility while minimizing the deterioration of stability in solution-processed zinc-tin oxide (ZTO) TFTs. The microstructural analyses reveal that while RE dopants suppress oxygen vacancies, Nd retards sol–gel polycondensation, inducing residual hydroxyl traps and morphological degradation. Conversely, La facilitates thorough dehydroxylation, yielding an ultra-smooth defect-minimized network. Consequently, the La: ZTO TFT demonstrates enhanced NBIS stability compared to pristine ZTO. To overcome carrier suppression from RE doping, the bilayer-channel TFT is fabricated, in which the highly conductive ZTO underlayer ensures efficient transport, while the dense La: ZTO capping layer acts as a barrier to passivate interfacial defects and shield against ambient interactions. The ZTO/La: ZTO TFT exhibits excellent switching performance, while the mobility is more than 2 times that of single-layer devices, and small N/PBIS Vth shifts (-3.55 /3.37 V). The RE-doped interface regulation strategy provides a highly viable pathway for fabricating stable, high-performance oxide semiconductor electronics.