Effect of annealing on nanostructured NixSn1-xO2 thin films for optoelectronic applications
摘要
Nanocrystalline nickel doped tin oxide thin films with varying annealing temperature were prepared by using spray pyrolysis technique. The deposition temperature of all the thin films was maintained at a constant of 350 °C, but were further annealed at 2 different temperatures 400 oC and 500 °C. Following this, a detailed study on the impact of annealing on structural, surface, linear and non-linear optical properties of the prepared thin films was studied. X-ray diffraction was used to determine the structural properties of the thin film where betterment in the crystallinity with temperature was observed. Also, an increase in the intensity of the peaks at higher annealing temperature was observed. The Field emission scanning electron microscopy (FESEM) images showed uniform and smooth films. A major decrease in the Root mean square (RMS) roughness of the annealed sample was observed using the Atomic force microscope (AFM) study. Linear optical studies were carried out were a slight increase in the transmittance with annealing was found. An increase in the band-gap from 3.41 eV in non-annealed samples to a maximum of 3.95 eV in annealed samples was found. A decrease in the PL intensity with annealing and increase in the number of peaks on annealing was confirmed by the photoluminescence spectroscopy. The non-linear optical study showed increase in 3rd order non-linear susceptibility from